High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures

Mosser, V.; Contreras, Sylvie; Aboulhouda, S.; Lorenzini, P.; Kobbi, F.; Robert, Jean-Louis; Zekentes, K.

doi:10.1016/0924-4247(93)00680-3

Cited by 41 publications

(12 citation statements)

References 5 publications

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“…[13][14][15][16][17][18] The best sensitivity we have obtained with EHE sensors is about 250 V/A T. We believe further enhancement is entirely possible to exceed the sensitivity offered by the semiconductor counterparts. Moreover, the EHE sensors can be made as thin as a few nm, nearly impossible with semiconductor Hall sensors because of their higher resistivity.…”

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confidence: 99%

Giant Hall resistance in Pt-based ferromagnetic alloys

Miao

Xiao

2004

Applied Physics Letters

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We report on the observation of a dramatically increased extraordinary Hall Effect in Pt-based ferromagnetic alloy thin films with varying composition and thickness that were deposited using magnetron sputtering. Hall slope as high as 76.8 μΩ cm/T has been obtained at 110 K and 22.6 μΩ cm/T at 300 K. Excellent sensitivity, linearity, and a small temperature coefficient have been achieved in a particular composition, Fe35Pt65, for a film thickness of 10 nm. The optimized Fe–Pt thin films compare favorably with the commonly used semiconductor Hall sensors.

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confidence: 99%

Giant Hall resistance in Pt-based ferromagnetic alloys

Miao

Xiao

2004

Applied Physics Letters

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“…However, Hall effect sensors using two-dimensional electron gas (2DEG) in a quantum well in III-V heterostructures showed a better potential for achieving ultimate metrological performances as compared to silicon-based Hall sensors. Especially, delta-doped AlGaAs/InGaAs/GaAs Hall sensors have shown very good performances in terms of magnetic 0960-1317/10/105013+06$30.00 sensitivity, thermal drift, offset and linearity as a function of the magnetic field [6,7]. Despite that, until now, only planar Hall sensors based on III-V semiconductors have been realized, which are able to detect the magnetic field only along the axis perpendicular to the wafer plane.…”

Section: Introductionmentioning

confidence: 99%

A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures

Todaro¹,

Sileo²,

Epifani³

et al. 2010

J. Micromech. Microeng.

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In this work, we demonstrate a fully integrated three-axis Hall magnetic sensor by exploiting microfabrication technologies applied to a GaAs-based heterostructure. This allows us to obtain, by the same process, three mutually orthogonal sensors: an in-plane Hall sensor and two out-of-plane Hall sensors. The micromachined devices consist of a two-dimensional electron gas AlGaAs/InGaAs/GaAs multilayer which represents the sensing structure, grown on the top of an InGaAs/GaAs strained bilayer. After the release from the substrate, the strained bilayer acts as a hinge for the multilayered structure allowing the out-of-plane self-positioning of devices. Both the in-plane and out-of-plane Hall sensors show a linear response versus the magnetic field with a sensitivity for current-biased devices higher than 1000 V A −1 T −1 , corresponding to an absolute sensitivity more than 0.05 V T −1 at 50 μA. Moreover, Hall voltage measurements, as a function of the mechanical angle for both in-plane and out-of-plane sensors, demonstrate the potential of such a device for measurements of the three vector components of a magnetic field.

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“…The use of a 2D electron gas (2DEG) in a quantum well (QW) as the active layer of a Hall element seems to be an effective method of achieving high electron mobility, low sheet electron density and reduced temperature sensitivity. A number of such sensors based on GaAlAs/GaAs [1], GaAlAs/GaInAs/GaAs [2], and InAlAs/InGaAs/InP [3] have recently been proposed.…”

Section: Introductionmentioning

confidence: 99%