Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

Litwin‐Staszewska, E.; Kobbi, F.; Kamal-Saadi, M.; Dur, D.; Skierbiszewski, C.; Sibari, H.; Zekentes, K.; Mosser, V.; Raymond, André; Knap, W.; Robert, Jean-Louis

doi:10.1016/0038-1101(94)90271-2

Cited by 11 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The distance between the voltage probes was 0.3 mm. The samples were characterized by luminescence, high magnetic field transport, and cyclotron emission experiments [2].…”

Section: Methodsmentioning

confidence: 99%

“…The experimental data are after [14] (circles) and [15] (triangles) 3 took a42 = 24 eV A as found for GaAs by measurements of spin relaxation by optical orientation [21]. The effective mass m* was set as 0.067mo as determined by cyclotron resonance emission measurements performed on the same samples [2]. The value of (ICE) has been obtained by self-consistent Poisson-Schrodinger calculations.…”

Section: Weak Antilocalization and The Spin Relaxationmentioning

confidence: 99%

See 1 more Smart Citation

Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

Knap

Zduniak

Dmowski

et al. 1996

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

We report magnetoconductivity experiments carried out on pseudomorphic AlGaAs/InGaAs/GaAs quantum wells in a wide range of magnetic fields (0.1 to 80 kG). Pressure-illumination cycles were used for tuning the free electron density. Measurements of the Shubnikov-de Haas and Hall effects allowed us to determine the transport and quantum relaxation times. Corrections to the magnetoconductivity due to weak localization and weak antilocalization were determined and used to calculate the phase and spin relaxation times. We analyzed phase, spin, quantum, and transport relaxation rates as a function of electron density which allowed for a characterization of the dominant scattering processes.

show abstract

“…The distance between the voltage probes was 0.3 mm. The samples were characterized by luminescence, high magnetic field transport, and cyclotron emission experiments [2].…”

Section: Methodsmentioning

confidence: 99%

Section: Weak Antilocalization and The Spin Relaxationmentioning

confidence: 99%

Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

Knap

Zduniak

Dmowski

et al. 1996

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…For value a42 we took 24 eV A3 as found in measurements of spin relaxation by optical orientation [7] and band-structure calculations [3] for GaAs. The effective mass m* was set at 0.067m0 as determined by cyclotron resonance emission measurements performed on the same samples [5]. Value of (k?)…”

Section: Resultsmentioning

confidence: 99%

“…They were grown by the molecular beam epitaxy technique. The layer sequence of the structure were of the standard HEMT type [5]. Both samples were 6-doped with Si (doping denSity Nó = 2.5 x 101 2 cm-2).…”

Section: Methodsmentioning

confidence: 99%

Weak Antilocalization in Quantum Wells

et al. 1995

Self Cite

View full text Add to dashboard Cite

Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak antilocalization corrections to the conductivity in GaInAs quantum wells. Consistent quantitative (up to order of magnitude) description of weak antilocalization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relaxation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.

show abstract

“…We found that for our samples ιφ/τ changes in the range from 35 to 50, and ;/τ in the range from 15 to 35. Because τ is determined from the zero field mobility and the known effective mass [5] we calculated that the values of τφ change in the range 35-50 ps and τs changes in the range 15-35 ps.…”

Section: Resultsmentioning

confidence: 99%

Universal Behaviour of Magnetoconductance due to Weak Localization in Two-Dimensional Systems - Example of GaInAs Quantum Wells

et al. 1995

Self Cite

View full text Add to dashboard Cite

Weak localization corrections to conductivity of a two-dimensional electroii gas are studied by measurements of the magnetic field dependence of the conductivity in GalnAs quantum wells. We observe that, when presented as a function of the normalized magnetic field (x = B/Btr , where B is the magnetic field, B« = h/4eτD, D is the dichusion constant and τ is momentum relaxation time), dicherent samples show very similar high field behaviour. A theoretical description is developed that allows one to describe in a consistent way high and low field behaviour. The theory predicts universal (B -1 /2 ) behaviour of the conductivity correction for all 2D systems in the high fiełd limit (r > 1). Low field behaviour depends strongly on spin and phase relaxation mechanisms. Comparison of the theory with experiment confirms the universal behaviour in the high fleld limit and allows one to estimate the spin and phase relaxatioii times for dicherent GalnAs quantum wells.PACS numbers: 73.20.Dx, 73.61.Ey Theoretical backgroundWeak-field magnetoconductance is due to quantum corrections to the conductivity, Δσ, arising from interference of electron waves scattered along closed paths in opposite directions. This interference is destroyed by the magnetic field because of the phase shift between the corresponding amplitudes which is equal to 21-/φ0, where φ ='BS is the magnetic flux through the area S of a closed path, φ0 = πħ/e is the elementary flux quantum. This idea lies in the basis of the theory of the weak localization magnetoconductance [1,2].

show abstract

Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

Cited by 11 publications

References 11 publications

Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

Study of Transport, Phase, and Spin Relaxation Times of 2D Electrons by Means of Pressure

Weak Antilocalization in Quantum Wells

Universal Behaviour of Magnetoconductance due to Weak Localization in Two-Dimensional Systems - Example of GaInAs Quantum Wells

Contact Info

Product

Resources

About