Low-cost 2DEG magnetic sensor with metrological performances for magnetic field and current sensing

Trilayer GMI sensors based on fast stress-annealing of FeSiBCuNb ribbons

“…The transfer function of the GMI element plotted in Fig. 9 reaches 160 V/T or 4500 V/A/T up to 1 kHz (to be compared to 750 V/A/T for AlGaAs/InGaAs/GaAl best Hall sensors working with nominal current of 1 mA [8] and to 72,000 V/A/T for TMR sensors [9]). We have also checked the high sensitivity of our trilayer GMI sensor: 100 mm diameter Helmholtz coils are used to generate an ac field (10 Hz) of 500 nT.…”

Performances of a Newly High Sensitive Trilayer F/CU/F GMI Sensor

“…The results obtained with spectrum noise analyzer are well consistent with the previous dc field measurements made with lock-in amplifier. AlGaAs/InGaAs/GaAl best Hall sensors working with nominal current of 1 mA [12]) up to a few hundred Hz. We have also checked the high sensitivity of F/Cu/F GMI sensor: 1m diameter Helmholtz coils are used to generate an AC field (100Hz) of 500 nT.…”

Real-time broadband subnoise level signal extraction in Hall sensors

“…In general, integrated silicon based Hall microsystems are used for less-challenging applications, whereas hybrid microsystems using Hall sensors based on a GaAs based heterostructure (QWHS = Quantum Well Heterostructure Sensor) together with a silicon based processing circuit are used for metrological applications. The latter solution benefits from a much higher electron mobility, absence of pinch-off effect or parasitic piezo-effects [9].…”