High-performance Hall sensors based on III–V heterostructures

Mosser, V.; Aboulhouda, S.; Denis, J-C.; Contreras, Sylvie; Lorenzini, P.; Kobbi, F.; Robert, Jean Louis

doi:10.1016/0924-4247(94)80032-4

Cited by 17 publications

(5 citation statements)

References 4 publications

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“…[13][14][15][16][17][18] The best sensitivity we have obtained with EHE sensors is about 250 V/A T. We believe further enhancement is entirely possible to exceed the sensitivity offered by the semiconductor counterparts. Moreover, the EHE sensors can be made as thin as a few nm, nearly impossible with semiconductor Hall sensors because of their higher resistivity.…”

mentioning

confidence: 99%

Giant Hall resistance in Pt-based ferromagnetic alloys

Miao

Xiao

2004

Applied Physics Letters

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We report on the observation of a dramatically increased extraordinary Hall Effect in Pt-based ferromagnetic alloy thin films with varying composition and thickness that were deposited using magnetron sputtering. Hall slope as high as 76.8 μΩ cm/T has been obtained at 110 K and 22.6 μΩ cm/T at 300 K. Excellent sensitivity, linearity, and a small temperature coefficient have been achieved in a particular composition, Fe35Pt65, for a film thickness of 10 nm. The optimized Fe–Pt thin films compare favorably with the commonly used semiconductor Hall sensors.

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confidence: 99%

Giant Hall resistance in Pt-based ferromagnetic alloys

Miao

Xiao

2004

Applied Physics Letters

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“…Therefore, there is no backgating effect in the structures, i.e. the sheet carrier density does not depend on the bias current, contrary to what was observed for the AlGaAs/GaAs Hall sensors [7] where it has recently been reported that there is an important backgating effect due to the semi-insulating GaAs substrate. The dependence of the Hall voltage on the magnetic field B is shown figure 7 for values of B in the range 5 mT to 0.3 T. The relative deviation of the measured values from a linear fit was calculated using (figure 8)…”

Section: Magnetic Sensitivity Temperature Coefficientmentioning

confidence: 63%

“…Recently several Hall sensors taking advantage of the properties of 2DEG heterostructures such as GaAlAs/GaAs [4,5], GaAlAs/GaInAs/GaAs [6][7][8], InAlAs/InGaAs/InP 0268-1242/96/040576+06$19.50 c 1996 IOP Publishing Ltd [9] and InGaAs/InP [10] have been proposed. We report here on the use of pseudomorphic InAlAs/InGaAs/InP heterostructures for the fabrication of Hall sensors with high sensitivity, low temperature coefficient, good linearity and high magnetic resolution.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive Hall sensors

Medico

Benyattou

Guillot

et al. 1996

Semicond. Sci. Technol.

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High-performance InGaAs/InAlAs/InP Hall sensors with high magnetic sensitivity, good linearity, low temperature coefficient and high resolution are reported. These sensors use the properties of a two-dimensional electron gas and the benefit of pseudomorphic material, in which both the alloy composition and the built-in strain offer additional degrees of freedom for band structure tailoring.With the described growth optimization of pseudomorphic In 0.75 Ga 0.25 As/Al 0.52 In 0.48 As heterostructures by molecular beam epitaxy, a high electron mobility of 13 000 cm 2 V −1 s −1 at room temperature has been obtained. A physical model of the structure including a self-consistent description of the coupled Schr ödinger and Poisson equations has been developed to better understand the influence of the design of the heterostructure on its electronic properties. These results have been used in order to optimize the structure design. A magnetic sensitivity of 580 V A −1 T −1 with a temperature coefficient of −550 ppm • C −1 between −80 • C and −85 • C has been obtained, and high signal-to-noise ratios corresponding to minimal magnetic field of 350 nT Hz −1/2 at 100 Hz and 120 nT Hz −1/2 at 1 kHz have been measured.

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“…We showed [11][12][13] that isothermal as well as thermostimulated capture experiments under pressure can be interpreted rather directly as evidence that the ground state of the centre is negatively charged.…”

Section: Introductionmentioning

confidence: 99%

DX centre in Si-doped Al_xGa_1-xAs: charge state and capture mechanism

Mosser

Contreras

Lorenzini

et al. 1992

Semicond. Sci. Technol.

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We discuss the capture mechanism into t h e D-ground state of the so-called DX centre in AI,Ga, _,As. Using experimental data for the thermally activated capture of electrons on DX centres in Si-doped AI,Ga, -.As samples in t h e region of x e 0.3 under pressure, we show that, if the emission from t h e intermediate neutral state of DX centres is activated, then an upper limit can be set for the value of the emission activation energy in Si-doped AI,,,Ga,.,As:Aem < 150 meV. This value is much less than the activation energy seen in DLTS, which is t h e activation energy for the emission from the negative ground state AEe& In emission experiments such as DLTS performed in Si-doped AI,Ga, _.As, both electrons are emitted practically at the same time.This paper was presented at the International Symposium on DX Centres and Other Metastable Defects in Semiconductors held at Mauterndorf, Austria, on 18-22 February 1991, but was received by the publisher lno late for inclusion in the special issue of this journal (volume 6, number IOB,

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High-performance Hall sensors based on III–V heterostructures

Cited by 17 publications

References 4 publications

Giant Hall resistance in Pt-based ferromagnetic alloys

Giant Hall resistance in Pt-based ferromagnetic alloys

Highly sensitive Hall sensors

DX centre in Si-doped Al_xGa_1-xAs: charge state and capture mechanism

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High-performance Hall sensors based on III–V heterostructures

Cited by 17 publications

References 4 publications

Giant Hall resistance in Pt-based ferromagnetic alloys

Giant Hall resistance in Pt-based ferromagnetic alloys

Highly sensitive Hall sensors

DX centre in Si-doped AlxGa1-xAs: charge state and capture mechanism

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DX centre in Si-doped Al_xGa_1-xAs: charge state and capture mechanism