Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two-terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Li CoO layer. These observations are very well correlated with the observed insulator-to-metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling - much further than the present cycling life of usual lithium-ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.
Following the recent advances in artificial synaptic devices and the renewed interest regarding artificial intelligence and neuromorphic computing, a new two-terminal resistive switching device, based on mobile Li+ ions is hereby explored. Emulation of neural functionalities in a biorealistic manner has been recently implemented through the use of synaptic devices with diffusive dynamics. Mimicking of the spontaneous synaptic weight relaxation of neuron cells, which is regulated by the concentration kinetics of positively charged ions like Ca2+, is facilitated through the conductance relaxation of such diffusive devices. Adopting a battery-like architecture, using LiCoO2 as a resistive switching cathode layer, SiOx as an electrolyte and TiO2 as an anode, Au/LiCoO2/SiOx/TiO2/p++-Si two-terminal devices have been fabricated. Analog conductance modulation, via voltage-driven regulation of Li+ ion concentration in the cathode and anode layers, along with current rectification and nanobattery effects are reported. Furthermore, evidence is provided for biorealistic synaptic behavior, manifested as paired pulse facilitation based on the summation of excitatory post-synaptic currents and spike-timing-dependent plasticity, which are governed by the Li+ ion concentration and its relaxation dynamics.
In the past, tantalum oxide devices have been used to create non-volatile digital memories, whilst neglecting the analogue memristive characteristics of such devices. In this Letter, it is shown that these devices can provide a low-cost, low-power solution for hemi-memristive devices, when used in their pre-formed, memristive region, whilst being fully CMOS compatible. Furthermore, measurements are presented from the devices that have been fabricated and it is shown that these devices do not require electroforming. Electroforming circuitry takes up valuable chip space at the transistor layers and significantly increases fabrication cost, since voltages as high as 12 V are required, which in turn requires extra masks to form high voltage devices and distribution circuits.
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