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The thin films of Nickel Phthalocyanine (NiPc) on glass substrates were prepared by vacuum evaporation at different substrates temperatures (300, 325, 350, 400, 450) K. The structure and surface morphology of NiPc in powder and thin film forms (265 nm) were studied using X-ray diffraction and atomic force microscope (AFM), and showed that there was a change and enhance in the crystallinity and surface morphology due to change in the substrates temperatures. Analysis of X-rays diffraction patterns of NiPc in powder form showed that it had an α-polycrystalline phase with monoclinic system with lattice constants a = 1.513 nm, b = 0.462 nm, c = 2.03 nm and β = 123.46°. Thermal evaporation of NiPc at different substrates temperatures led to β-crystalline films oriented preferentially to the (100) plane with different substrate temperatures. The mean crystallite size increased with substrates temperatures

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Ni-Phthalocyanine thin films were thermally evaporated with different substrate temperatures (300 -450) K on (silicon wafer, glass) substrates. The chemical bonds of NiPc powder were investigated by FTIR spectrum, which introduce good information for NiPc bonds and their locations. The optical properties have been studied by UV-Visible, and Photoluminescence (PL) Spectra. The NiPc thin films have direct gap for all samples. The values of energy gap which is calculated by PL spectra are lower than those calculated by Tauc equation. It is found there are three activation energies, the mobility and concentration of carriers have been measured and, the NiPc films are p-type. P-NiPc/n-Si HJ solar cell was fabricated at substrates temperatures (300, 400) K. From I-V and C-V characteristic, abrupt junction has been found, photovoltaic characteristics have been observed with Voc of (0.335 -0.415) V, and Isc of (2.77 -4.26) μA, and the efficiency of (3.08 -5.03)% at room temperature and substrate temperature (300, 400 K) and under illumination of 55 mW/cm 2 using Halogen lamp. Ideality factors of the junction increase from (0.61 -0.73) and barrier height increases from 2.53 eV to 3.69 eV while shunt resistance decreases from 3.76 KΩ to 2.59 KΩ and series resistance decreases slightly from 0.24 KΩ to 0.23 KΩ. The fill factor decreases from 0.46 to 0.4 with the increase of substrate temperature.

We prepared polythiophene (PTH) with single wall carbon nanotube (SWCNT) nanocomposite thin films for Nitrogen dioxide (NO2) gas sensing applications. Thin films were synthesized via electrochemical polymerization method onto (Indium tin oxide) ITO coated glass substrate of thiophene monomer with magnesium perchlorate and different concentration from SWCNT (0.012 and 0.016) % in the presence130mL of Acetonitrile used. X-ray diffraction (XRD), Field Emission Scanning Electron microscopy (FE-SEM), Atomic Force Microscope (AFM) and Fourier Transform Infrared Spectroscopy (FT-IR) were used to characterized these nanocomposite thin films. The response of these nanocomposite for NO2 gas was evaluated via monitoring the change time in presence 25% NO2 of with electrical resistance at (40, 80,120,160 and 200)°C. We can observe that the PTh/SWCNT films show a higher sensitivity as compare to pure PTH.

Thin films of Nickel Phthalocyanine have been prepared by evaporation technique for (50-350 nm) of thickness. XRD studies show that the thin films have single crystalline structure for low thicknesses with (100) orientation and the crystallite size increased with increased thickness. Also from the AFM technique for NiPc films, the roughness was determined and the grain size increases with increasing of thickness from except at thickness 350 nm. The studies of electrical properties, morphology and orientations of the crystallites are important to understand and predict the nature of the films and essential for their successful applications in solar cell and sensors. The electrical properties of these films were studied with different thickness, NiPc has three activation energy. Carrier's concentration and mobility was calculated. Hall measurements showed that all the films are p-type.

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PbS x Se 1-x alloys with different S content (0,0.1,0.15,0.3,0.4,1) have been successfully prepared by evacuated quartz tube under vacuum pressure (10 -2 Toor). PbS x Se 1-x thin films have been prepared by thermal evaporation technique on glass substrate at room temperature (RT) under vacuum pressure 10 -5 mbar at deposition rate 5nm/sec .The effect of S content on some of the electrical properties has been studied.The structure of (PbS x Se 1-x ) alloys and films have been studied by X-ray diffraction technique. X-ray diffraction study shows that the Structure is polycrystalline with cubic Structure with preferential orientation in the (200) direction for films. From D.C measurements all films have shown two activation energies, the first at low temperature for activation energy E a2 and the second at high temperature for activation energy E a1 ,where these value decreases with increasing S content. And it is found that D.C conductivity decreased with increasing S content, while activation energy increases with increasing S content.. From the Hall measurement, the films of (X=0,0.1,0.15,0.3,0.4) are n-type and the films of (X=1) are p-type. Also the results showed that the carriers concentration decreases with increasing S content, but the Hall mobility µ H increased, and the value of R H ) decreased with increasing S content.