Influence of Sulphur on structural and electrical properties of PbSxSe1-x films

Abstract

PbS x Se 1-x alloys with different S content (0,0.1,0.15,0.3,0.4,1) have been successfully prepared by evacuated quartz tube under vacuum pressure (10 -2 Toor). PbS x Se 1-x thin films have been prepared by thermal evaporation technique on glass substrate at room temperature (RT) under vacuum pressure 10 -5 mbar at deposition rate 5nm/sec .The effect of S content on some of the electrical properties has been studied.The structure of (PbS x Se 1-x ) alloys and films have been studied by X-ray diffraction technique. X-ray diffraction study shows that the Structure is polycrystalline with cubic Structure with preferential orientation in the (200) direction for films. From D.C measurements all films have shown two activation energies, the first at low temperature for activation energy E a2 and the second at high temperature for activation energy E a1 ,where these value decreases with increasing S content. And it is found that D.C conductivity decreased with increasing S content, while activation energy increases with increasing S content.. From the Hall measurement, the films of (X=0,0.1,0.15,0.3,0.4) are n-type and the films of (X=1) are p-type. Also the results showed that the carriers concentration decreases with increasing S content, but the Hall mobility µ H increased, and the value of R H ) decreased with increasing S content.

PbS x Se1−x thin films from the thermal decomposition of lead(II) dodecylxanthate and bis(N,N-diethyl-N′-naphthoylselenoureato)lead(II) precursors

“…Chugaev elimination to yield the corresponding metal sulfides [1,2]. Most reports on the syntheses of nanoparticulate PbS x Se (1-x) concern hot injection methods [9][10][11][13][14][15][16], flash evaporation [17], thermal evaporation [18] or vacuum evaporation [12] techniques, which all require moderately harsh conditions including high vacuum, expensive apparatus and very toxic starting materials.…”