The thin films of Nickel Phthalocyanine (NiPc) on glass substrates were prepared by vacuum evaporation at different substrates temperatures (300, 325, 350, 400, 450) K. The structure and surface morphology of NiPc in powder and thin film forms (265 nm) were studied using X-ray diffraction and atomic force microscope (AFM), and showed that there was a change and enhance in the crystallinity and surface morphology due to change in the substrates temperatures. Analysis of X-rays diffraction patterns of NiPc in powder form showed that it had an α-polycrystalline phase with monoclinic system with lattice constants a = 1.513 nm, b = 0.462 nm, c = 2.03 nm and β = 123.46°. Thermal evaporation of NiPc at different substrates temperatures led to β-crystalline films oriented preferentially to the (100) plane with different substrate temperatures. The mean crystallite size increased with substrates temperatures

Ni-Phthalocyanine thin films were thermally evaporated with different substrate temperatures (300 -450) K on (silicon wafer, glass) substrates. The chemical bonds of NiPc powder were investigated by FTIR spectrum, which introduce good information for NiPc bonds and their locations. The optical properties have been studied by UV-Visible, and Photoluminescence (PL) Spectra. The NiPc thin films have direct gap for all samples. The values of energy gap which is calculated by PL spectra are lower than those calculated by Tauc equation. It is found there are three activation energies, the mobility and concentration of carriers have been measured and, the NiPc films are p-type. P-NiPc/n-Si HJ solar cell was fabricated at substrates temperatures (300, 400) K. From I-V and C-V characteristic, abrupt junction has been found, photovoltaic characteristics have been observed with Voc of (0.335 -0.415) V, and Isc of (2.77 -4.26) μA, and the efficiency of (3.08 -5.03)% at room temperature and substrate temperature (300, 400 K) and under illumination of 55 mW/cm 2 using Halogen lamp. Ideality factors of the junction increase from (0.61 -0.73) and barrier height increases from 2.53 eV to 3.69 eV while shunt resistance decreases from 3.76 KΩ to 2.59 KΩ and series resistance decreases slightly from 0.24 KΩ to 0.23 KΩ. The fill factor decreases from 0.46 to 0.4 with the increase of substrate temperature.

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Thin films of Nickel Phthalocyanine have been prepared by evaporation technique for (50-350 nm) of thickness. XRD studies show that the thin films have single crystalline structure for low thicknesses with (100) orientation and the crystallite size increased with increased thickness. Also from the AFM technique for NiPc films, the roughness was determined and the grain size increases with increasing of thickness from except at thickness 350 nm. The studies of electrical properties, morphology and orientations of the crystallites are important to understand and predict the nature of the films and essential for their successful applications in solar cell and sensors. The electrical properties of these films were studied with different thickness, NiPc has three activation energy. Carrier's concentration and mobility was calculated. Hall measurements showed that all the films are p-type.

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