A new shear apparatus for small angle neutron scattering (SANS) measurements Rev.Small angles, 30' or less, cannot be measured with sufficient accuracy by a goniometer. The newly developed small-angle measurement apparatus (SAM) described here is capable of measuring angles as small as 6' with a precision of 2%. Theoretical calculations are compared with experimental results derived from both SAM and the goniometer. While this technique was developed for application to polished silicon wafers, it can be used to measure small angles on any reflecting surface. 1

Ion implantation and proton−enhanced diffusion in semiconductorsSingle crystals of silicon containing prediffused arsenic, boron, and phosphorus profiles are bombarded at 600--900°C with 250--360-keV protons. Under conditions approaching ideality (low impurity concentration and less than 1013 protons/cm 2 sec) enhanced impurity diffusion appears to proceed in an uncomplicated manner which is well described by steady-state kinetic treatment. At high temperatures and very low bombardment fluxes the enhanced-diffusion coefficients are observed to be temperature independent and first-order dependent upon flux. At moderately increased damage rates, particularly at lower temperatures, the diffusivities become temperature dependent and a half-order flux dependence is observed. The results are explained by assuming proton-enhanced diffusion to be controlled by the migration of split monovacancies (semivacancy pairs). Consistency with annealing studies of radiationinduced defects at much lower temperatures and with thermally activated diffusion studies at higher temperatures is attained by assuming a 1.47-eV migrational enthalpy and a 3.66-eV enthalpy of formation for the uncharged defect.

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CHLORINE LEVELS IN SiO2 419merits, the initial concentration near the silicon interface is too low (< 1El8 atom/cm~). High temperature annealing (1000~ is then needed to form a C1 peak at the interface, but in the process C1 evaporates up to 98% of the original content, losing the advantage of high C1 doping. This anneal and the high temperature cycle of LPCVD deposition are in conflict with current trends in very large scale integration to reduce the thermal budget. Since LPCVD oxide is used for interlevel dielectric after MOS source/drain formation, an extended thermal budget would increase the lateral diffusion of these regions and contribute to their encroachment below the channel. This severely limits MOS device scaling.For all these reasons, TCA oxidation appears superior, particularly since it has been proven effective at reduced temperature (900~ with the customary TCA content of 2.5 equiv, percent HC1. ABSTRACTTransistor p-n junctions are observed to have leaky electrical characteristics and increased resistivity after exposure to oxygen plasma. Heating the devices above 180~ for at least 10 min in vacuum, nitrogen, forming gas, or air eliminates the problem and returns the desired electrical characteristics. Experiments indicate that the increase in resistivity is associated with a boron displacement from silicon lattice sites. Additional experiments indicate that this phenomenon can be caused by reactively ion etching or plasma ashing a bare silicon surface which is doped with boron.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.69.4.4 Downloaded on 2015-06-04 to IP