Apparatus for the Measurement of Small Angles

Tong, A. H.; Gorey, E. F.; Schneider, Christian

doi:10.1063/1.1685621

Cited by 15 publications

(10 citation statements)

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“…The lapping angles were measured by an optical technique developed by Tong et al (8). The staining solution for this purpose consisted of 8 g/liter of CuSO4 9 5H~O and 10 ml/liter of concentrated hydrofluoric acid (49% HF) (3).…”

Section: Methodsmentioning

confidence: 99%

A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon

Ahn

Tiller

1988

J. Electrochem. Soc.

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Section: Methodsmentioning

confidence: 99%

A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon

Ahn

Tiller

1988

J. Electrochem. Soc.

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“…400-4, pp. [13][14]. The present task was undertaken to derive theoretical expressions for mobility in ptype silicon that would yield satisfactory agreement with experimental data.…”

Section: Capacitance-voltage Methodsmentioning

confidence: 99%

“…400-4, pp. [13][14]. These data were obtained by combining four-probe resistivity measurements with measurements of Hall coefficient of ultrasonically machined bar-shaped specimens (solid squares) and of capacitance-voltage characteristics of ungated diodes (solid triangles).…”

Section: Capacitance-voltage Methodsmentioning

confidence: 99%

“…neutron activation analysis [26][27] nuclear-track technique [36][37] numerical aperture, optical microscope [42][43][44] optical image profiles [42][43][44] optical microscope focus [42][43][44] optical test for surface quality [37][38][39] oxide hygrometer sensor [49][50][51] particle-impact noise detection (FIND) resolution, scanning acoustic microscope [55][56][57] safe-operating-area (SOA) limit, transistor 57-59 sapphire substrates [37][38][39]; see also silicon on sapphire scanning acoustic microscopy [54][55][56][57] scanning low-energy electron probe (SLEEP) 33-34 second breakdown [57][58][59] secondary-ion mass spectroscopy (SIMS) 33 silicon on sapphire (SOS) 24-25; 27; 37-39; 48; 54 spreading resistance methods [7][8][9][10][11][12][13][14][15][16][17] spu...…”

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Semiconductor measurement technology

Bullis¹,

Mayo-Wells²

1978

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“…Profiles of implanted boron, arsenic and phosphorus, diffused to depths of 10^im, have been measured recently [29] using the spreading resistance probe. The data confirmed diffusion calculations, and were in good agreement with results of incremental sheet resistance measurements.…”

Section: Epitaxy Modelsmentioning

confidence: 99%

Spreading resistance symposium

Ehrstein¹

1974

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This Symposium on Spreading Resistance measurements was held on June [13][14] 1974 This technique which has seen rapidly increasing interest and use over the last 10 )r more years, has noteworthy versatility for profiling dopant concentrations over many jrders of magnitude in multiple layer semiconductor structures. Nevertheless, the ever in-:reasing demand on all measurement methods, caused by device fabrication utilizing active regions often less than 1 ym in thickness, taxes the theory, practice and successful applization of all techniques, including the electrical spreading resistance.It is hoped that this symposium, by illustrating the successful applications which lave been made of the technique, and by indicating some of the areas where limitations iiave been found to exist, will encourage further effort by interested parties, to find solutions to those limitations. ' Finally, by compiling a store of well documented measurement practice in one volume, ]lt is hoped that the beginner in this technique will find rapid solutions to possible lasic problems, so that he too may make rapid and successful use of this technique. 13-14, 1974. This Symposium covered the state of the art of the theory, practice and applications of the electrical spreading resistance measurement technique as applied to characterization of dopant density in semiconductor starting materials and semiconductor device structures. In addition to the presented papers, the transcripts of the discussion sessions which were held directly after the Theory, Practice and Applications sessions are also included. These transcripts, which were reviewed by the respective respondents for clarity, are essentially as presented at the symposium.Key words: Dopant concentration, dopant profiles, metal-semiconductor contacts, resistivity, semiconductor surface preparation, silicon, spreading resistance. And here again we find ourselves working closely with ASTM which can so effectively provide an avenue to accomplishing these NBS aims, aims which are, of course, common to thos of ASTM's Committee on Electronics.Our Program now encompasses work on selected measurements, ranging from those needed to characterize silicon and oxides and interface states, through those for photolithography, process control using test structures, bonding and die attachment, and hermeticity; on to thermal and electrical properties of finished devices. And we report our output not only through ASTM but through many other channels including a special series of NBS publications with which many of you are familiar. The technique is based on measurement of the "spreading resistance" or "constriction resistance" of small-area metal-semiconductor pressure contacts.It is currently in wide use in mapping inhomogeneities in silicon crystals and in obtaining thickness profiles of many of the diffused, epitaxial and ion-implanted layers produced during semiconductor device processing.Small area metal-semiconductor pressure contacts are historically somewhat loosely called "point" conta...

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Apparatus for the Measurement of Small Angles

Cited by 15 publications

References 0 publications

A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon

A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon

Semiconductor measurement technology

Spreading resistance symposium

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