Proton-enhanced diffusion and vacancy migration in silicon

Masters, B. J.; Gorey, E. F.

doi:10.1063/1.325193

Cited by 72 publications

(10 citation statements)

References 26 publications

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“…Two different groups have produced radiation damage by proton bombardment at temperatures high enough that dopant diffusion may be observed directly during the defeet creation process. Gorey (1978, 1979) studied the radiation-enhanced di6'usion of B, P, and As in the temperature range 600 -900 C. They found similar enhancements for B and P, and these were larger than the enhancements for As. They have proposed that the diftusion enhancements they observe are due to the split silicon vacancy, which diff'uses with a migration enthalpy of 1.5 eV.…”

Section: B Experimental Determination Of Defect Migration Energiesmentioning

confidence: 56%

“…'Armstrong (1962). 'Masters and Fairfield (1969). Guerrero, Jungling, Potzl, Gosele, Mader, Grasserbauer, and Stingeder (1986).…”

Section: Isoconcentration Studiesmentioning

confidence: 98%

“…Some early attempts at isoconcentration studies were made by Masters and Fairfield (1969), who studied the diffusion of As in heavily doped As backgrounds; Makris and Masters (1971), who studied the diffusion of Ga in heavily doped B backgrounds; and Makris and Masters (1973), who studied the diffusion of P in heavily doped 'P backgrounds. These studies demonstrated that concentration-dependent diffusion could be modeled effectively by assuming D~'s of the form n D~+ =D~+xP+D~+x A X n cident with this fast diffusion, Sb atoms increasingly occupy nonsubstitutional sites (up to 80%).…”

Section: Isoconcentration Studiesmentioning

confidence: 99%

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Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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Section: B Experimental Determination Of Defect Migration Energiesmentioning

confidence: 56%

“…'Armstrong (1962). 'Masters and Fairfield (1969). Guerrero, Jungling, Potzl, Gosele, Mader, Grasserbauer, and Stingeder (1986).…”

Section: Isoconcentration Studiesmentioning

confidence: 98%

Section: Isoconcentration Studiesmentioning

confidence: 99%

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Point defects and dopant diffusion in silicon

1989

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“…Enhanced diffusion of various elements in Si has also been obtained by radiation with protons (23,24). This radiation probaoly generates lattice vacancies at a depth comparable to the proton range.…”

Section: Discussionmentioning

confidence: 97%

Enhanced Diffusion of Implanted Arsenic and Boron in Silicon by Low‐Temperature Heat‐Treatment

Gurp

Slotboom

Smolders

et al. 1980

J. Electrochem. Soc.

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The parameters of high frequency transistors with implanted arsenic emitter and boron base were found to change significantly on annealing at temperatures between 600 ~ and 900~ with a maximum change at about 700~ The change can be interpreted as a decrease of boron concentration in the base and of the donor concentration gradient at the emitter-base junction. Determination of the concentration profiles by secondary ion mass spectrometry and by Rutherford backscattering spectrometry (RBS) showed that these decreases were due to enhanced diffusion of both arsenic and boron. Electron microscopy showed precipitation which was probably preceded by arsenic clustering, in agreement with RBS channeling results. These showed that the substitutional fraction of arsenic, which was between 95% and 98%, decreased by a few percent on annealing at 700~ The enhanced diffusion is thought to be caused by vacancy generation by either one of two precipitation-induced processes: dissociation of As-vacancy complexes or growth of interstitial defects.Implanted arsenic is now widely used as a donortype impurity in silicon. For example, bipolar transistors are made with implanted boron base and arsenic emitter. After implantation the As and B are electrically activated by an appropriate heat-treatment around 1000~ In a process which involved a subsequent annealing at 650~ we found that the parameters of high frequency transistors with shallow As emitter (0.2 #m) and B base (0.35 #m) were drastically affected by this annealing. The current gain, for example, was greatly increased.The effects of low temperature heat-treatments on Si with As diffused into it have been studied earlier.Osvenskii et al. (1) found interstitial dislocation loops by transmission electron microscopy on As-doped Si crystals which had been annealed at 800~ in vacuum after quenching from 1250~The loops were attributed to As precipitation. Schwenker et al. (2) found for As diffused at 1050 ~ and ll00~ to a depth of 6-9 #m into Si that heat-treatment between 500 o and 970~ in argon caused the sheet resistance to increase. Around 750~ this increase was maximum, being a factor of 2 at a surface concentration of 1.2 • 1021 cm -3 and less at lower concentrations. Transmission electron microscopy showed dark spots and interstitial hexagonal Frank dislocation loops. The effects on sheet resistance were ascribed to As clustering or vacancy-complex formation. An increase in sheet resistance due to heat-treatment between 500 ~ and 800~in vacuum was also found by Miyamoto et al. (3) who observed an increase of the lattice constant, which was supposed to be due to SiAS formation. Haskell et aI.(4) studied Rutherford backscattering on As in Si and found from channeling that 90% to 95% of the As was on lattice sites. Heat-treatment between 650 ~ and 900~ in argon increased the aligned As yield, showing As to be displaced from substitutional lattice sites.Shibayama et al. (5) observed an enhancement of both B and As diffusion in Si for As surface concentrations above about 1020 cm ...

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“…[25] is generalized to .li + Jz+ Jv+ Ji= u(t) t2 [27] Vacancy winds and/or interstitialcy winds may occur in substrates subjected to bombardments by energetic particles, including ion implantations. The observed uphill diffusion of boron and phosphorus due to proton irradiation of silicon (85,86) cannot be explained in terms of radiation enhanced diffusion (87,88). Flux interactions have to be invoked.…”

Section: Pumping Of Point Defects By Diffusionmentioning

confidence: 99%

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

1992

J. Electrochem. Soc.

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Overwhelming evidence has been accumulated since 1974 that diffusion in silicon takes place via a dual vacancy‐interstitialcy mechanism. Most of the ensuing discoveries of new phenomena and the further sophistication of the dual vacancy‐interstitialcy diffusion model are related to nonequilibrium point defects. Many sources of excess silicon interstitials and excess vacancies have been discovered; but the mechanisms of defect generation, particularly by surface sources, have remained unresolved issues. We discuss in some detail two areas that are very important in diffusion modeling, but have not been well understood; the relationship between the concentrations of vacancies and interstitials under nonequilibrium conditions, and the chemical pump and the vacancy wind phenomena. We also discuss the interactions between point defects and oxygen precipitation and their implications.

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Proton-enhanced diffusion and vacancy migration in silicon

Cited by 72 publications

References 26 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

Enhanced Diffusion of Implanted Arsenic and Boron in Silicon by Low‐Temperature Heat‐Treatment

Vacancies and Self‐Interstitials in Silicon: Generation and Interaction in Diffusion

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