1982
DOI: 10.1016/0029-554x(82)90561-4
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Pulsed ion beam irradiation of silicon

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Cited by 20 publications
(3 citation statements)
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“…In the case of lithium ions, resulting range profiles can be impacted by fast diffusion at elevated sample temperatures. In silicon crystals this can be expected for energy fluences >0.1 J/cm 2 [23][24][25].…”
Section: Discussion Of Defect Dynamics Studies Enabled By Short Ion Bmentioning
confidence: 91%
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“…In the case of lithium ions, resulting range profiles can be impacted by fast diffusion at elevated sample temperatures. In silicon crystals this can be expected for energy fluences >0.1 J/cm 2 [23][24][25].…”
Section: Discussion Of Defect Dynamics Studies Enabled By Short Ion Bmentioning
confidence: 91%
“…reducing channeling in crystalline target materials. Use of very intense, short ion beam pulses has also been explored for semiconductor processing, such as simultaneous implantation and annealing [23][24][25]. In NDCX-II, the ion beam is transported through a beam line with a series of acceleration and beam shaping elements, leading to pure Li + beams with tunable angular divergence.…”
Section: Discussion Of Defect Dynamics Studies Enabled By Short Ion B...mentioning
confidence: 99%
“…Recently, however, these ion beams with ion energies from 50 keV to 10 MeV, ion currents from 1 kA to 10 MA, and pulse durations from 10 to 1000 ns have been finding new applications in diverse fields such as materials processing [4], [5]. Because of the short range of the ions in matter, its application usually involves the surface modification of materials, e.g., implantation [6], alloy mixing [7], [8], defect formation [9], [10], and thin-film deposition [11], [12]. For many of these applications, these beams are used primarily as heat sources to ablate or rapidly melt solid targets.…”
Section: Introductionmentioning
confidence: 99%