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The time domain and electric field dependence of the polarization switching kinetics of poly(vinylidene fluoride-trifluoroethylene) copolymer based thin film metal-ferroelectric-metal capacitors have been characterized. At room temperature, the time required for complete switching polarization decreases from >1 s to <50 μs as the voltage is increased from 6 to 12 V, while low nonswitching polarization is maintained. In the time domain, the ferroelectric switching polarization reversal behavior for devices biased above the coercive field follows the nucleation-limited-switching model. The exponential relationship between switching time and applied electric field indicates nucleation dominated switching kinetics. Switching behavior as a function of temperature was also characterized from −60 to 100 °C in the voltage range of 6–12 V. Higher temperatures induce larger dc conductance leakage at low frequencies and increases nonswitching polarization for all the voltages studied. It is demonstrated that for certain frequencies, by controlling the switching voltage, our optimized ferroelectric thin film capacitor shows stable switching polarization in a temperature range compatible with flexible electronics applications.

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We have demonstrated a low temperature fully integrated process for a ferroelectric random access memory array for potential flexible electronics applications. The memory cell is based on a two-transistor-two-capacitor structure, with cadmium sulfide as the semiconductor material for n-channel thinfilm transistors, and poly(vinylidene fluoride-trifluoroethylene) copolymer as the ferroelectric material for capacitors. At VDD = 5 V, a voltage difference of ∼1 V between the two states (0 and 1) is achieved at the output of the sense amplifier.Index Terms-Cadmium sulfide (CdS), ferroelectric, ferroelectric random access memory array (FRAM), flexible electronics, low temperature, poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)], two-transistor-two-capacitor (2T2C).