Gettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been measured by deep level transient spectroscopy. These data, coupled with structural characterization techniques, such as transmission electron microscopy and preferential chemical etching, provide evidence that structural postimplantation damage below the buried oxide (BOX) in SIMOX wafers is an effective site for gettering of iron with the iron gettering efficiency varying with the SIMOX processing. Gettering was not observed in bonded wafers, and the lower BOX interface did not provide any iron gettering in either bonded or SIMOX wafers.
Laterally displaced gettering sites have been studied as an alternative to traditional internal gettering and back-side gettering sites. Fe was diffused laterally and captured, first by coulombic pairing with B in p-type Si, and then by strategically placed ion implantation induced dislocation loops. This localization of Fe was tracked by both deep level transient spectroscopy and capacitancevoltage measurements. As proof of the viability of the gettering technique, laterally displaced gettering sites were formed adjacent to capacitors on various silicon-on-insulator (SOI) substrate types. Both implantation induced dislocation loops and P diffusion were used for gettering. An improvement in gate oxide integrity was observed for capacitors with lateral gettering on all SOI types studied.
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