Ferroelectric Properties and Polarization Switching Kinetic of Poly (vinylidene fluoride-trifluoroethylene) Copolymer

Mao, Duo; Gnade, Bruce E.; Quevedo‐Lopez, Manuel

doi:10.5772/17147

Cited by 39 publications

(48 citation statements)

References 41 publications

(57 reference statements)

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“…In the β crystalline phase of P(VDF-TrFE), the unit cell is orthorhombic, with each chain aligned and packed with the CF 2 groups parallel to the b-axis [11,15]. Figure 1a shows the XRD pattern of P(VDF-TrFE) for different annealing temperatures (80, 90, 100, 110, 120, 140 °C) to obtain information on the degree of the crystalline structure of the copolymer thin films.…”

Section: Resultsmentioning

confidence: 99%

“…Annealing can be used to improve the crystalline structure, reduce the porosity and ensure the elimination of the residual solvent used during the fabrication process of P(VDF-TrFE) thin films. The temperature used for annealing, the time of annealing and the rate of ramping up and cooling are three important parameters in the thermal annealing process [11]. Annealing temperature must be above the Curie temperature, T c , and below the melting point, T m , of the material when the material is in between the ferroelectric phase and the paraelectric phase.…”

Section: Introductionmentioning

confidence: 99%

“…A high crystalline structure can be achieved by using this technique at 100 °C. In the previously reported studies, the lowest heating temperature needed to optimize the crystalline structure was around 140 °C [1,9,11]. If the temperature is closer to the melting point of the copolymer, it will be partially melted, and that will have an effect on the degree of the crystalline structure.…”

Section: Introductionmentioning

confidence: 99%

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Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

Mahdi

Gan

Majid

2014

Sensors

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Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

Mahdi

Gan

Majid

2014

Sensors

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“…The electrical performance of our 2T2C FRAM array can be further improved by enhancing the TFT channel mobility, Vt stability, quality of the ferroelectric film, and process integration. We have demonstrated <50-μs switching time and >1×10 6 stress cycle fatigue capability for the isolated ferroelectric capacitor [26], [27], [30]. Further study on the frequency response of the 2T2C FRAM array and reliability including memory window degradation during program/read stress, and data retention are important and needed for future development.…”

Section: Resultsmentioning

confidence: 88%

“…The data writing time t DW is programmed to be 200 ms (t DWH = t DWl = 1/2 t DW ), t WR is 300 ms, and all other ac time parameters are set to be 100 ms. The program and read times depend on applied voltage as discussed earlier in [26] and [30] and can be optimized for different applications. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Low Temperature Processed Two-Transistor- Two-Capacitor-Based Ferroelectric Random Access Memory

Mao

Mejía

Salas-Villasenor

et al. 2014

IEEE Trans. Electron Devices

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We have demonstrated a low temperature fully integrated process for a ferroelectric random access memory array for potential flexible electronics applications. The memory cell is based on a two-transistor-two-capacitor structure, with cadmium sulfide as the semiconductor material for n-channel thinfilm transistors, and poly(vinylidene fluoride-trifluoroethylene) copolymer as the ferroelectric material for capacitors. At VDD = 5 V, a voltage difference of ∼1 V between the two states (0 and 1) is achieved at the output of the sense amplifier.Index Terms-Cadmium sulfide (CdS), ferroelectric, ferroelectric random access memory array (FRAM), flexible electronics, low temperature, poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)], two-transistor-two-capacitor (2T2C).

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Bioinspired Multifunctional Ceramic Platelet‐Reinforced Piezoelectric Polymer Composite

et al. 2016

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Hybrid materials of inorganic-organic phases in which each phase provides different functionality are attractive candidates for achieving multifunctionality. Using a layer-by-layer approach, we fabricated sheets of piezoelectric polymer P(VDF-TrFE) reinforced by aligned sub-micron thick sapphire platelets. The films were transparent and piezoelectric, exhibited ductility up to %330%, and tensile toughness of up to 26 J g -1 . We investigated the effect of thermal annealing on the crystallinity of the polymer phase and its effect on the mechanical and piezoelectric properties of the films. Thermal annealing resulted in improvement of the elastic modulus and piezoelectric properties of the films. in situ SEM tensile experiments were conducted for observation of the deformation mechanism of the films.

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Ferroelectric Properties and Polarization Switching Kinetic of Poly (vinylidene fluoride-trifluoroethylene) Copolymer

Cited by 39 publications

References 41 publications

Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

Low Temperature Processed Two-Transistor- Two-Capacitor-Based Ferroelectric Random Access Memory

Bioinspired Multifunctional Ceramic Platelet‐Reinforced Piezoelectric Polymer Composite

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