A series of double-comb, disubstituted polysiloxane polymers have been prepared containing oligoethylene oxide units, CH3(OCH2CH2) n (CH2)3−, in the side chains. These polymers were doped with LiN(SO2CF3)2 (LiTFSI, 1), and conductivities of the polymer-salt complexes were determined as a function of temperature and doping level. Conductivities increase with n up to n = 6 and then decrease. The maximum conductivity of the polymer with n = 6 at 25 °C was 4.5 × 10-4, the highest value yet recorded for a lithium-doped polymer electrolyte.

a b s t r a c tWe have been developing a novel radiation-tolerant n þ -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out (Y. Unno).Nuclear Instruments and Methods in Physics Research A 765 (2014) 80-90 n þ -in-p P-type Radiation-tolerant HL-LHC PTP together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

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