Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

Unno, Y.; Edwards, S.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L. B. A. H.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrère, D.; Sevilla, Sergio González; Ashby, J.; Blue, A.; Bates, R. L.; Buttar, C. M.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O’Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, Ryutaro; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D. C.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M. R.; Palni, P.; Seidel, S. C.; Taylor, A. C.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Doležal, Z.; Kodyš, P.; Böhm, J.; Mikeštíková, M.; Bevan, A. J.; Beck, G. A.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A.A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F-W.; Schumacher, Douglas; Seiden, A.; French, Richard; Hodgson, P.; Marin-Reyes, Hector; Parker, K. A.; Paganis, E.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; García, C.; Jiménez, Jose M.; Lacasta, C.; Garcı́a, S. Martı́ i; Soldevila, U.

doi:10.1016/j.nima.2014.06.086

Cited by 44 publications

(48 citation statements)

References 12 publications

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“…Details of the design including strip isolation structure and the edge strips ganging are described in Ref. [8].…”

Section: Samples and Irradiationmentioning

confidence: 99%

“…However, n þ -in-p strip sensors need additional strip isolation. Al a r g ea r e an þ -in-p silicon sensor for the use in ITk has been developed by the ATLAS ITk Strip Sensor Collaboration [7,8] and produced by Hamamatsu Photonics (HPK) [9] in a 6-inch (150 mm) wafer. Besides the large sensor (9.75 cm Â 9.75 cm), the wafer also includes sets of miniature sensors, which are used for irradiation studies.…”

Section: Introductionmentioning

confidence: 99%

“…The sensors were irradiated by different particles, energies and doses and were distributed for extensive test to many institutions of the collaboration for studies of sensor properties that have received up to double maximal fluence predicted in ITk. The samples for the surface irradiation study presented in this paper are the barrel and end-cap (EC) miniature strip sensors of the latest sensor design, called ATLAS12 [8] which was developed from ATLAS07 design [7]. The surface properties before and after ionizing radiation up to the proton fluence of 1 Â 10 16 n eq /cm 2 , neutron fluence 1 Â 10 15 n eq /cm 2 and gamma dose of up to 1 MGy were evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Mikeštíková

Allport

Baca

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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A radiation hard n þ -in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics.Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1 Â 10 16 n eq /cm 2 , by reactor neutron fluence of 1 Â 10 15 n eq /cm 2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

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“…Details of the design including strip isolation structure and the edge strips ganging are described in Ref. [8].…”

Section: Samples and Irradiationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Mikeštíková

Allport

Baca

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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“…The ATLAS12A (A12A, for short) and ATLAS12M (A12M) [12] sensor layouts are the latest sensor designs implemented at the time of writing (2016). A12 main sensors have the axial strips only and A12M main sensors have the axial and stereo strips mixed.…”

Section: Introductionmentioning

confidence: 99%

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Hara¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Article:Hara, K., Allport, P.P., Baca, M. et al. ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade The ATLAS group has evaluated the charge collection in silicon microstrip sensors irradiated up to a fluence of 1 × 10 16 n eq /cm 2 , exceeding the maximum of 1.6 × 10 15 n eq /cm 2 expected for the strip tracker during the high luminosity LHC (HL-LHC) period including a safety factor of 2. The ATLAS12, n þ -on-p type sensor, which is fabricated by Hamamatsu Photonics (HPK) on float zone (FZ) substrates, is the latest barrel sensor prototype. The charge collection from the irradiated 1 Â 1cm 2 barrel test sensors has been evaluated systematically using penetrating β-rays and an Alibava readout system. The data obtained at different measurement sites are compared with each other and with the results obtained from the previous ATLAS07 design. The results are very consistent, in particular, when the deposit charge is normalized by the sensor's active thickness derived from the edge transient current technique (edge-TCT) measurements. The measurements obtained using β-rays are verified to be consistent with the measurements using an electron beam. The edge-TCT is also effective for evaluating the field profiles across the depth. The differences between the irradiated ATLAS07 and ATLAS12 samples have been examined along with the differences among the samples irradiated with different radiation sources: neutrons, protons, and pions. The studies of the bulk properties of the devices show that the devices can yield a sufficiently large signal for the expected fluence range in the HL-LHC, thereby acting as precision tracking sensors.

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“…This work is focused on the investigation of performance of the endcap ATLAS12A sensors [8,9] produced by Hamamatsu. Charge collection as a function of bias voltage characteristics of sensors irradiated with γ-rays and protons at different doses and fluences, as well as the stability in time, are presented.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

Mori¹,

Allport²,

Baca³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tThe upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

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Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

Cited by 44 publications

References 12 publications

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Charge collection and field profile studies of heavily irradiated strip sensors for the ATLAS inner tracker upgrade

Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

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