The ABCD3TA is a 128-channel ASIC with binary architecture for the readout of silicon strip particle detectors in the Semiconductor Tracker of the ATLAS experiment at the Large Hadron Collider (LHC). The chip comprises fast front-end and amplitude discriminator circuits using bipolar devices, a binary pipeline for first level trigger latency, a second level derandomising buffer and data compression circuitry based on CMOS devices. It has been designed and fabricated in a BiCMOS radiation resistant process. Extensive testing of the ABCD3TA chips assembled into detector modules show that the design meets the specifications and maintains the required performance after irradiation up to a total ionising dose of 10 Mrad and a 1-MeV neutron equivalent fluence of 2×1014 n/cm2, corresponding to 10 years of operation of the LHC at its design luminosity. Wafer screening and quality assurance procedures have been developed and implemented in large volume production to ensure that the chips assembled into modules meet the rigorous acceptance criteria
Low Gain Avalanche Detectors (LGAD) are based on a n ++ -p + -p-p ++ structure where an appropriate doping of the multiplication layer (p + ) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 µm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 · 10 15 cm −2 . Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 µm) and offer larger charge collection with respect to detectors without gain layer for fluences < 2 · 10 15 cm −2 . Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no Work performed in the framework of the CERN-RD50 collaboration.
silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2, 3] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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