Sensors for ultra-fast silicon detectors

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, Douglas; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

doi:10.1016/j.nima.2014.05.006

Cited by 41 publications

(33 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Strip iLGAD detectors are now being fabricated at IMB-CNM clean room including different design options and process technology variations to determine the optimum parameters to get a stable gain along the operating reverse voltage range and accurate detection performances. Strip iLGAD detectors are initially fabricated on conventional p-type silicon substrates but SOI substrates will also be used in next batches to obtain thin detectors with fast timing detection capabilities [10].…”

Section: Inverse Low Gain Avalanche Detectors (Ilgad)mentioning

confidence: 99%

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Pellegrini¹,

Baselga²,

Carulla³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n ++ -p + -p structure, where the doping profile of the p + layer is optimized to achieve high field and high impact ionization at the junction.The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

show abstract

Section: Inverse Low Gain Avalanche Detectors (Ilgad)mentioning

confidence: 99%

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Pellegrini¹,

Baselga²,

Carulla³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

show abstract

“…The design of ultra-fast silicon detectors (UFSD) [4,5,6] exploits the effect of charge multiplication in LGAD to obtain a silicon detector that can concurrently measure with high accuracy time and space. The development of UFSD will open up a range of new opportunities for applications that benefit from the combination of position and timing information.…”

Section: Ultra-fast Silicon Detectorsmentioning

confidence: 99%

Performance of ultra-fast silicon detectors

Cartiglia¹,

Baselga²,

Dellacasa³

et al. 2014

J. Inst.

View full text Add to dashboard Cite

show abstract

“…4D tracking N. Cartiglia with signals that are a factor of 10 higher than those of standard sensors, however without the problems connected with the APD high gain [8,9,10,11,12].…”

Section: Pos(ifd2015)026mentioning

confidence: 99%