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Paper electronics has emerged as an ecofriendly, light, low-cost, and recyclable material for the fabrication of flexible and printed transistors. In this study, we present fully printed organic electrochemical transistors using an active layer of PEDOT:PSS, carbon electrodes, cellulose-based electrolyte, and three different papers as substrates: bond, vegetal, and Lumi Silk, relating the electrical properties to the different morphologies of the paper surfaces. Each paper presents different regularity, diffusion capabilities, and roughness, with significant influence on the transistor performance. The more organized and smooth the surface, the better the electrical characteristics, the best of these being the Lumi Silk, with higher I on/I off ratio of 46, on-current of 8.3 × 10−5 A, V on of 1.3 V, and power gain of 43.5 dB associated with ultra-low hysteresis of 0.1 V, high transconductance of −57.3 μS, and suitablity for flexible electronics and sensors applications.

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Accepted/In press). Improvement of the deep UV sensor performance of a-Ga2O3 photodiode by coupling of two planar diodes. IEEE Transactions on Electron Devices.

Printed electronics is a reputable research area that encourages the search for simple alternatives of manufacturing processes for low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed electrolyte-gated transistors with in-plane gate architecture (IPGT) based on zinc oxide nanoparticles (ZnO-NPs). The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a control device, using the same structure as the IPGT described above by adding an ITO strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.1 cm2V-1s-1, while the W/L = 2.5 device exhibited a mobility of 3.7 cm2V-1s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the geometric parameters of the devices were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited better values for mobility and transconductance than the top-gate transistor, showing that the IPGTs setup is a good promise for cheap and printed transistors with performance comparable to standard top-gate transistors.

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