UV-Assisted Annealing Effect on the Performance of an Electrolyte-Gated Transistor Based on Inkjet Printed ZnO Nanoparticles Blended With Zinc Nitrate

Morais, Rogério Miranda; Vieira, Douglas Henrique; Ozório, Maíza da Silva; Pereira, L.; Martins, Rodrigo; Alves, Neri

doi:10.1109/ted.2021.3139852

Cited by 6 publications

(2 citation statements)

References 42 publications

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“…These aspects take into account not only the type of electrolyte but also the properties of the semiconductor layer. As examples of active layers in EGTs we can mention graphene [7], carbon nanotubes [8], poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) [9], polythiophenes [10], and metallic phthalocyanines (MPcs) [11] and zinc oxide (ZnO) [12][13][14][15]. ZnO stands out due to its characteristics as an n-type semiconductor with a large bandgap (3.37 eV), high isoelectric point (∼9), low toxicity, biocompatibility, and biodegradability [12,16,17].…”

Section: Introductionmentioning

confidence: 99%

Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution

Ozório,

Rubira,

Vieira

et al. 2023

J. Phys. D: Appl. Phys.

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The use of electrolyte-gated transistors (EGTs) as sensors can be an advantageous alternative for the detection of anionic molecules due to their capability to detect various ions in solution. In this study, we explore the potential of EGTs as analytical tools for detecting anionic molecules, utilizing a copper phthalocyanine-3,4′,4″,4″′-tetrasulfonic acid tetrasodium salt (CuTsPc) solution as a proof of concept. The results demonstrate the EGT's capacity in detecting CuTsPc in an aqueous solution, which molecule dissociates into sodium ions (Na+) and CuPc(SO3−)4 ions, leading to high ionic conductivity and the formation of electrical double layers (EDLs). Varying the concentration of the molecule induced alterations in the EDLs, exhibiting good linearity and sensitivity in the transconductance, and a detection limit of 6.0×10-8 mol/L. Transistors employing the CuTsPc solution as electrolyte operated at low voltages and performed better than water-gated transistors (W-GTs). The transconductance (gm) value for EGTs using CuTsPc solution reached 1.93 mS, while for W-GTs it was around 0.10 mS. Thus, the CuTsPc solution not only serves as a target-molecule in sensor measurements, but also demonstrates potential as an electrolyte in EGTs, thereby assuming a dual role within the device. The main advantage of the EGTs as an analytical tool is their use as a multiparameter device that enables the detection of the analytes using different phenomena that occur at the EDLs interface and which, consequently, changes the device's performance.

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Section: Introductionmentioning

confidence: 99%

Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution

Ozório,

Rubira,

Vieira

et al. 2023

J. Phys. D: Appl. Phys.

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“…Over the past 20 years, oxide semiconductors have significantly improved in chemical and technical processes, and solution-processed TFTs with high mobilities of approximately 10 cm·V −1 s −1 or more have been reported [ 5 , 6 ]. Particularly, solution-processed oxide semiconductor TFTs using nitrate precursors exhibit enhanced film quality because of the high volatility of the by-products in the reaction process [ 7 , 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

et al. 2022

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The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.

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Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

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Proposals for new architectures that shorten the length of the transistor channel without the need for high‐end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte‐gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte‐gated vertical field‐effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray‐pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current‐voltage relationship arising from space‐charge‐limited current (SCLC), whereas its capacitor cell provided the field‐effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray‐pyrolyzed ZnO‐based transistors, paving the way for future nano‐ and optoelectronic applications.

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UV-Assisted Annealing Effect on the Performance of an Electrolyte-Gated Transistor Based on Inkjet Printed ZnO Nanoparticles Blended With Zinc Nitrate

Cited by 6 publications

References 42 publications

Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution

Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution

Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

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