Improvement of the Deep UV Sensor Performance of a β-Ga₂O₃ Photodiode by Coupling of Two Planar Diodes

Abstract

Accepted/In press). Improvement of the deep UV sensor performance of a-Ga2O3 photodiode by coupling of two planar diodes. IEEE Transactions on Electron Devices.

Fabrication of a poly(N-vinyl carbazole)/ϵ-Ga2O3 organic–inorganic heterojunction diode for solar-blind sensing applications

“…Figure 2(c) shows the absorption spectra of ε-Ga 2 O 3 film, with a clear absorption edge located at about 250 nm. In the inset of figure 2(c) the bandgap of ε-Ga 2 O 3 film is determined to be 4.84 eV by fitting the extrapolating linear region of plots of (αhv) 2 versus hv, where α is the absorbance coefficient, h is Planck's constant and v is the frequency of the incident light. Figure 2(d) shows the absorption spectra of PVK film, with two strong absorption peaks at around 332 and 350 nm, almost consistent with the absorption peaks of PVK nanoparticles and solution.…”

“…Ultraviolet (UV) photodiodes that demonstrate a rectification effect triggered by UV photons have attracted much attention for diverse applications such as intruder monitors, environmental monitoring and medical and industrial uses [1,2]. The essential requirement of such UV photodiodes is a large bandgap value of the active materials.…”

“…The essential requirement of such UV photodiodes is a large bandgap value of the active materials. Among a series of wide bandgap semiconductors such as ZnO, GaN, SiC, Ga 2 O 3 , AlN and diamond, Ga 2 O 3 is an ideal candidate for the UVC wavelength due to its bandgap of 4.5-5.2 eV [2,3]. Ga 2 O 3 has five phases, α, β, γ, δ and ε [4]; the β-phase is the most chemically and thermally stable and has been researched widely in optoelectronics and electronics [4][5][6].…”

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

“…Hou et al [151] reported a high-temperature β-Ga 2 O 3 Schottky photodiode with a RuO x contact whose rectifying ratio was as high as 10 10 ; when the temperature was increased up to 350 • C, the reverse leakage current remained low and the Schottky barrier was 2.2 eV. In view of the device structure remold, Vieira et al [152] improved the photo-sensing performance of the Ga 2 O 3 Schottky photodiode by coupling two planar diodes; the I photo increased as much as 186 times, and the R and D * also improved significantly. In addition, from two points of materials and devices, the modification of the Schottky barrier interface (concerning the basic feature of Schottky photodiode) [153] and the study on defect physics (concerning trapping) in Ga 2 O 3 [154][155][156][157][158][159] contribute to the boom in next-generation functional DUV photodetectors in actual applications [4,160,161].…”

Piezoelectric properties of substitutionally doped $β$-Ga$_2$O$_3$

“…G ALLIUM oxide (Ga 2 O 3 ) has been increasingly investigated due to its ultra-wide bandgap (4.8 eV), which has sparked enormous research and development especially in areas of power electronics and solar blind UV photodetection [1], [2]. Ga 2 O 3 has five crystallographic phases, α, β, γ, δ, and ǫ.…”