Organic multivalued logic circuits (OMVLs) have drawn tremendous attention due to their high data processability and simple fabrication techniques. However, OMVLs have so far been achieved only on rigid silicon substrates, and this limits their potential for broader applications. In this study, we develop an organic ternary inverter on plastic substrates. The inverters showed well-balanced ternary logic states with high voltage gain and low power consumption. Importantly, the devices exhibited stable operation even after 100 bending cycles, demonstrating high flexibility and reliability. This device has high potential to attain mechanical flexibility and data handling capability at the same time.

A ternary inverter is demonstrated based on an organic antiambipolar transistor (AAT), in which the output logic states can be precisely controlled with appropriate optical signals. First, the photoresponse of AATs consisting of PTCDI‐C8 and α‐6T layers is systematically investigated. Under visible light, the Λ‐shaped transfer curve of the AATs undergoes a noticeable broadening due to the optically induced threshold voltage shift in both the PTCDI‐C8 and α‐6T controlled ranges. Under ultraviolet light, broadening is observed only on the α‐6T side. These contrasting impacts of the two light signals enable to tune the balance of the ternary logic states in the inverters, including the output voltage levels and the ratio of the respective logic states. Such optically controlled ternary logic circuits possess great potential for their application in next‐generation optoelectronic devices.

A high-performance organic ternary logic circuit is developed. High carrier mobilities of the organic semiconductors and their contrasting photoresponse achieved a full-swing operation, optical controllability and high noise margin in the devices.

Organic integrated circuits have emerged as potential candidates for nextgeneration computing technology because of their low-cost production, light weight, and mechanical flexibility. However, the incompatibility of organic devices with modern lithographic techniques leads to a major bottleneck, that is, low integration density. Herein, it is attempted to solve this issue by developing an organic quaternary inverter that exhibits four distinguishable logic states and thus, can significantly improve the level of device integration. The key component of the inverter is a double-peaked antiambipolar transistor (DAAT) with a double sequential negative differential transconductance characteristic. First, the DAAT is developed by employing two lateral p-n heterojunctions, namely C8-BTBT/PTCDI-C8 and C8-BTBT/PhC2-BQQDI, in which three distinct conducting paths are produced in a step-by-step manner in accordance with the increase in the gate voltage (V G ). Next, the quaternary inverter circuit is implemented by connecting the DAAT with an n-type transistor. The inverter exhibits four logic states with a complete drain voltage to ground voltage sweep. Finally, a strategy of optimizing the thickness of the PTCDI-C8 layer to improve the voltage transfer characteristics of the quaternary inverters is demonstrated. This study, thus, represents a step toward the development of high-performance organic integrated circuits.

Logic-in-memory (LIM) has emerged as an energyefficient computing technology, as it integrates logic and memory operations in a single device architecture. Herein, a concept of ternary LIM is established. First, a p-type 2,7-dioctyl [1,8-gh]quinolone diimide (PhC2-BQQDI) transistor to obtain a binary memory inverter, in which a zinc phthalocyanine-cored polystyrene (ZnPc-PS 4 ) layer serves as a floating gate. The contrasting photoresponse of the transistors toward visible and ultraviolet light and the efficient holetrapping ability of ZnPc-PS 4 enable us to achieve an optically controllable memory operation with a high memory window of 18 V. Then, a ternary memory inverter is developed using an anti-ambipolar transistor to achieve a three-level data processing and storage system for more advanced LIM applications. Finally, low-voltage operation of the devices is achieved by employing a high-k dielectric layer, which highlights the potential of the developed LIM units for next-generation low-power electronics.

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This paper briefly reviews recent progress in antiambipolar transistor (AAT) development. A variety of semiconducting materials, such as two-dimensional (2D) atomic layers, carbon nanotubes, and organic semiconductors (OSCs), have been...