Effect of solvent induced dielectric property modulation of poly(methyl methacrylate) insulator on the electrical and photosensing behaviour of p-channel organic transistors

Panigrahi, Debdatta; Kumar, Sujit; Dhar, A.

doi:10.1016/j.polymer.2017.09.065

Cited by 12 publications

(11 citation statements)

References 34 publications

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“…This can be attributed to the high free volume present in such films which eventually increases the leakage current as evidenced from the leakage current characteristics and which in turn increases the off‐current. [ 30 ] Almost same SS and

N_{{\rm{ss}}}^{{\rm{max}}}

are observed for OFETs with ≈120 000 and ≈350 000 molecular weight‐PMMA, especially when they are cast from the high or moderate dipole moment solvent.…”

Section: Resultsmentioning

confidence: 88%

“…Although previously, pentacene based OFETs fabricated with PMMA gate dielectric films cast from high dipole moment‐solvents showed considerable improvements in most of the device performance parameters, this could not be correlated with surface morphology and surface energy. [ 27,30,31 ]…”

Section: Resultsmentioning

confidence: 99%

“…This result is in contradiction with literature, in which a huge drain current decrease in pentacene based OFETs with PMMA gate dielectric layer cast from high dipole moment‐solvents was reported. [ 30 ] They reported that bias stress instabilities usually occur due to charge trapping at the semiconductor dielectric interface in which solvent induced PMMA chain packing and free volume distribution play a major role. [ 45 ]…”

Section: Resultsmentioning

confidence: 99%

“…Although previously, pentacene based OFETs fabricated with PMMA gate dielectric films cast from high dipole moment-solvents showed considerable improvements in most of the device performance parameters, this could not be correlated with surface morphology and surface energy. [27,30,31] Since, the morphology of PMMA does not vary much with respect to the casting solvent, the deciding factor for the different morphology of the overlying pentacene films should be the surface energy. Increasing the solvent polarity of the PMMA gate dielectric leads to an increase in end-to-end distance of the PMMA polymer chains due to the strong polymer solvent interactions which leads to better orientation of the well-separated functional groups.…”

Section: Studies On Surface Energy Morphology and Capacitancementioning

confidence: 99%

“…This result is in contradiction with literature, in which a huge drain current decrease in pentacene based OFETs with PMMA gate dielectric layer cast from high dipole moment-solvents was reported. [30] They reported that bias stress instabilities usually occur due to charge trapping at the semiconductor dielectric interface in which solvent induced PMMA chain packing and free volume distribution play a major role. [45] The three major sources of instability/hysteresis in polymer gate dielectric layer based OFETs are a) semiconductor-dielectric interface charges, b) charges due to slowly polarizing dipoles, and c) gate-injected charges.…”

Section: Output and Transfer Characteristics Of The Devicementioning

confidence: 99%

See 4 more Smart Citations

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Rajeev

Pillai

Nunzi

et al. 2021

Macro Materials & Eng

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The semiconductor/dielectric interface controls the performance of organic field-effect transistors (OFETs). Herein, the influence of both the molecular weight and the polarity of the solvent of a poly(methyl methacrylate) (PMMA)-based gate dielectric on the performance of pentacene OFETs is systematically investigated, by studying surface energy, surface roughness, morphology, leakage current, and capacitance of the dielectric. Various existing views on the role of the surface energy are considered while deriving a correlation. Larger pentacene grains are observed when the film is grown on high molecular weight-PMMA films cast from high dipole moment-solvent. The electrical properties of the corresponding OFETs show great improvement compared to those of OFETs fabricated with low molecular weight-PMMA film as the gate dielectric, irrespective of the solvent. The authors attribute this enhanced performance to the increased surface energy of the polymeric dielectric which turns out to be a strong function of its molecular weight and the dipole moment of the solvent. Bias-stress measurements on the OFETs confirm this correlation.

show abstract

N_{{\rm{ss}}}^{{\rm{max}}}

are observed for OFETs with ≈120 000 and ≈350 000 molecular weight‐PMMA, especially when they are cast from the high or moderate dipole moment solvent.…”

Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Studies On Surface Energy Morphology and Capacitancementioning

confidence: 99%

Section: Output and Transfer Characteristics Of The Devicementioning

confidence: 99%

See 3 more Smart Citations

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Rajeev

Pillai

Nunzi

et al. 2021

Macro Materials & Eng

View full text Add to dashboard Cite

show abstract

Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Nketia‐Yawson

Noh

2018

Adv Funct Materials

149

114

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The gate dielectric layer is an essential element of field‐effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high‐capacitance polymer gate dielectric materials and their application for low‐voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low‐k dielectric materials, and the development and use of high‐capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.

show abstract

Synthesis and characterization of silanized-SiO2/povidone nanocomposite as a gate insulator: The influence of Si semiconductor film type on the interface traps by deconvolution of Si2s

Hashemi

Bahari

2018

Current Applied Physics

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Effect of solvent induced dielectric property modulation of poly(methyl methacrylate) insulator on the electrical and photosensing behaviour of p-channel organic transistors

Cited by 12 publications

References 34 publications

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Synthesis and characterization of silanized-SiO2/povidone nanocomposite as a gate insulator: The influence of Si semiconductor film type on the interface traps by deconvolution of Si2s

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