Optically Controllable Organic Logic-in-Memory: An Innovative Approach toward Ternary Data Processing and Storage

Abstract

Logic-in-memory (LIM) has emerged as an energyefficient computing technology, as it integrates logic and memory operations in a single device architecture. Herein, a concept of ternary LIM is established. First, a p-type 2,7-dioctyl [1,8-gh]quinolone diimide (PhC2-BQQDI) transistor to obtain a binary memory inverter, in which a zinc phthalocyanine-cored polystyrene (ZnPc-PS 4 ) layer serves as a floating gate. The contrasting photoresponse of the transistors toward visible and ultraviolet light and the efficient holetrapping ability of ZnPc-PS 4 enable us to achieve an optically controllable memory operation with a high memory window of 18 V. Then, a ternary memory inverter is developed using an anti-ambipolar transistor to achieve a three-level data processing and storage system for more advanced LIM applications. Finally, low-voltage operation of the devices is achieved by employing a high-k dielectric layer, which highlights the potential of the developed LIM units for next-generation low-power electronics.

Performance Enhancement of Organic Ternary Logic Circuits through UV Irradiation and Geometry Optimization

“…[23] Additionally, AATs with floating gate layers allow for ternary logicin-memory devices, accomplishing ternary logic and memory operation in a single device architecture. [24] In the field of organic MVLs, considerable research has been conducted to develop high-performance ternary logic circuits that meet essential performance parameters, such as full-swing operation and low driving voltages. [17,[25][26][27][28][29][30][31] However, attaining a precise voltage balance between logic states is a significant challenge in ternary logic circuits.…”

High-performance ambipolar field-effect transistors with a Ph-BTBT-10/PMMA/ZnO structure

“…Ambipolar field-effect transistors (FETs) have extensive application prospects in various emerging areas such as synaptic, 1-3 memory [4][5][6] and logic devices [7][8][9] due to their unique property of simultaneously transporting holes and electrons in conductive channels. 10,11 Zinc oxide (ZnO) as one of the representative metal oxide semiconductors has excellent properties, such as low cost, non-toxicity and high carrier mobility, and has been widely studied in FETs.…”

Electron Trapping Group Induced Enhancement in Photoresponses of Organic Field-Effect Transistors

“…Organic field-effect transistors (OFETs), structurally simple devices with intricate charge transport mechanisms, have stimulated a great amount of research attention due to their low-cost fabrication processes, mechanical flexibility, and solution processability. , The integration of photodetection ability into OFETs has led to the emergence of organic phototransistor (OPT) devices, unlocking a wide area of applications in image sensing technology, nonvolatile photomemory, photodetection, optical switches, and so on. − In OPTs, superior photodetectibility of organic semiconductors is subjected to gate modulation, resulting in an amplified output signal characterized by high sensitivity and low noise. Consequently, the selection of an organic semiconductor as the active layer plays a critical role in determining the performance of the OPTs.…”