Recent advancements in transistor technology, such as the 35 nm InP HEMT, allow for the development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) with performance properties that challenge the hegemony of SIS mixers as leading radio astronomy detectors at frequencies as high as 116 GHz. In particular, for the Atacama Large Millimeter and Submillimeter Array (ALMA), this technical advancement allows the combination of two previously defined bands, 2 (67-90 GHz) and 3 (84-116 GHz), into a single ultra-broadband 2+3 (67-116 GHz) receiver. With this purpose, we present the design, implementation, and characterization of LNAs suitable for operation in this new ALMA band 2+3, and also a different set of LNAs for ALMA band 2. The best LNAs reported here show a noise temperature less than 250 K from 72 to 104 GHz at room temperature, and less than 28 K from 70 to 110 GHz at cryogenic ambient temperature of 20 K. To the best knowledge of the authors, this is the lowest wideband noise ever published in the 70-110 GHz frequency range, typically designated as W-band.

Context. The Atacama Large Millimeter/submillimeter Array (ALMA) has been in operation since 2011, but it has not yet been populated with the full suite of its planned frequency bands. In particular, ALMA Band 2 (67-90 GHz) is the final band in the original ALMA band definition to be approved for production. Aims. We aim to produce a wideband, tuneable, sideband-separating receiver with 28 GHz of instantaneous bandwidth per polarisation operating in the sky frequency range of 67-116 GHz. Our design anticipates new ALMA requirements following the recommendations of the 2030 ALMA Development Roadmap. Methods. The cryogenic cartridge is designed to be compatible with the ALMA Band 2 cartridge slot, where the coldest components -the feedhorns, orthomode transducers, and cryogenic low noise amplifiers -operate at a temperature of 15 K. We use multiple simulation methods and tools to optimise our designs for both the passive optics and the active components. The cryogenic cartridge is interfaced with a room-temperature (warm) cartridge hosting the local oscillator and the downconverter module. This warm cartridge is largely based on GaAs semiconductor technology and is optimised to match the cryogenic receiver bandwidth with the required instantaneous local oscillator frequency tuning range. Results. Our collaboration has resulted in the design, fabrication, and testing of multiple technical solutions for each of the receiver components, producing a state-of-the-art receiver covering the full ALMA Band 2 and 3 atmospheric window. The receiver is suitable for deployment on ALMA in the coming years and it is capable of dual-polarisation, sideband-separating observations in intermediate frequency bands spanning 4-18 GHz for a total of 28 GHz on-sky bandwidth per polarisation channel. Conclusions. We conclude that the 67-116 GHz wideband implementation for ALMA Band 2 is now feasible and that this receiver provides a compelling instrumental upgrade for ALMA that will enhance observational capabilities and scientific reach. 1 https://www.almaobservatory.org of construction. Recent technological developments in cryogenic monolithic microwave integrated circuits (MMICs) and optical components, such as wide bandwidth feedhorns, orthomode transducers (OMT), and lens designs -have opened up the opportunity to extend the originally-planned radio-frequency (RF) bandwidth of this receiver, to cover the 67-116 GHz frequency range on-sky with a single receiver. This holds the potential for combining ALMA Band 2 (67-90 GHz) with ALMA Band 3 (84-116 GHz), serving as an upgrade that paves the way for wider bandwidth ALMA operations. As discussed in Mroczkowski et al. 2019a, this approach offers several opera-Article number, page 1 of 23

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Realizing packaged state-of-the-art performance of monolithic microwave integrated circuits (MMICs) operating at millimeter wavelengths presents significant challenges in terms of electrical interface circuitry and physical construction. For instance, even with the aid of modern electromagnetic simulation tools, modeling the interaction between the MMIC and its package embedding circuit can lack the necessary precision to achieve optimum device performance. Physical implementation also introduces inaccuracies and requires iterative interface component substitution that can produce variable results, is invasive and risks damaging the MMIC. This paper describes a novel method for in situ optimization of packaged millimeter-wave devices using a pulsed ultraviolet laser to remove pre-selected areas of interface circuit metallization. The method was successfully demonstrated through the optimization of a 183 GHz low noise amplifier destined for use on the MetOp-SG meteorological satellite series. An improvement in amplifier output return loss from an average of 12.9 dB to 22.7 dB was achieved across an operational frequency range of 175–191 GHz and the improved circuit reproduced. We believe that our in situ tuning technique can be applied more widely to planar millimeter-wave interface circuits that are critical in achieving optimum device performance.

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