A GaAs Ka-band (26&amp;#x2013;36 GHz) LNA for radio astronomy

Cuadrado-Calle, David; George, Danielle; Fuller, G. A.

doi:10.1109/imarc.2014.7039046

Cited by 13 publications

(3 citation statements)

References 3 publications

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“…In order to validate the stability of the LNA, a stability analysis was performed across a frequency range of 10-60 GHz. For unconditional stability, the stability factor (Kf) should be greater than 1 [19,20]. The proposed LNA was unconditionally stable in the frequency range of 10-60 GHz, which is way beyond the operating frequency range of LNAs, and its stability factor (Kf) was as shown in Figure 15.…”

Section: Resultsmentioning

confidence: 97%

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

et al. 2021

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This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

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Section: Resultsmentioning

confidence: 97%

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

et al. 2021

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“…However, with modern closed cycle cryogenics, the need for supply of liquid helium has substantially reduced, and at ground-based observatories the maintenance cost of 4 K and 20 K cryostats is not so different. Key differences between these two systems are exposed when considering likely future advancements required for astronomy; for instance, spaceborne applications and large format heterodyne focal plane arrays [40]. With these latter applications demands on cryocooler heat lift, and reliability, will be stringent, as will overall power consumption efficiency.…”

Section: E Cryogenic Systemmentioning

confidence: 99%

Celestial Signals: Are Low-Noise Amplifiers the Future for Millimeter-Wave Radio Astronomy Receivers?

et al. 2017

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“…Although III–V compounds such as gallium arsenide (GaAs) technologies are generally employed in very-high-frequency scenarios with demanding NF requirements such as mm-wave applications, 5G networks, or satellite communications (SATCOMs), SOI technologies provide a comparable performance while facilitating system integration with lower production costs. Both III–V and SOI technologies can find application in high-resolution radar, short-range military aircraft radios, and astronomical observations, which operate at Ka-band frequencies [ 25 , 26 , 27 , 28 , 29 ]. For instance, the 28 GHz frequency band is identified as a pioneer band to host 5G new radio (NR) networks worldwide.…”

Section: Introductionmentioning

confidence: 99%

A gm/ID-Based Low-Power LNA for Ka-Band Applications

Galante-Sempere,

Torres-Clarke,

del Pino

et al. 2024

Sensors

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This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency. The circuit is suitable for Ka-band applications with a central frequency of 28 GHz, as the circuit is intended to operate in the n257 frequency band defined by the 3GPP 5G new radio (NR) specification. The proposed cascode LNA uses the gm/ID methodology in an RF/MW scenario to exploit the advantages of moderate inversion region operation. The circuit occupies a total area of 1.23 mm2 excluding pads and draws 1.98 mW from a DC supply of 0.9 V. Post-layout simulation results reveal a total gain of 11.4 dB, a noise figure (NF) of 3.8 dB, and an input return loss (IRL) better than 12 dB. Compared to conventional circuits, this design obtains a remarkable figure of merit (FoM) as the LNA reports a gain and NF in line with other approaches with very low power consumption.

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A GaAs Ka-band (26–36 GHz) LNA for radio astronomy

Cited by 13 publications

References 3 publications

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

Celestial Signals: Are Low-Noise Amplifiers the Future for Millimeter-Wave Radio Astronomy Receivers?

A gm/ID-Based Low-Power LNA for Ka-Band Applications

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