Cryogenic low noise MMIC amplifiers for U-Band (40–60 GHz)

Samoska, Lorene; Fung, A.; Kangaslahti, Pekka; Gawande, Rohit; Soria, Mary; Lawrence, C. R.; Gaier, T.; Cuadrado-Calle, David; George, Danielle; Fuller, G. A.; Varonen, Mikko; Lai, R.; Sarkozy, S.; Cleary, Kieran

doi:10.1109/eumic.2016.7777495

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…The uncertainty of the measured NF is about 0.2 dB, which is a typical value at the measured frequency. The average NF of the LNA is about 1.43 dB over the designed band and the NF has a minimum of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA . The gain and NF comparison between the GaAs LNA, InP LNA and the LNA in this work is given in Table .…”

Section: Mmic Characterizationmentioning

confidence: 93%

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Tong

Zhang

et al. 2018

Int J RF Microw Comput Aided Eng

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GaN technology has attracted main attention towards its application to high‐power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon‐substrate GaN MMIC LNA operating in 18‐31 GHz frequency range using a commercial 0.1 μm T‐Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small‐signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than −10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four‐stage MMIC is 2.3 × 1.0 mm2 in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.

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Section: Mmic Characterizationmentioning

confidence: 93%

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

Tong

Zhang

et al. 2018

Int J RF Microw Comput Aided Eng

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“…Because radiated signals can be confined to each cavity, another amplifier IC is not affected. Comparing to the conventional cascade high-gain block [2,13] connecting external WGs or other passive components [14], the compact and low-cost module can be implemented for mm-wave system applications. In this work, the MSL-to-WG transition as well as an input and output port based on a WR22 WG has been designed and fabricated.…”

Section: Waveguide Integrated Metal Casementioning

confidence: 99%

“…As a result, the high-gain amplifier module can be oscillated. Therefore, in order to suppress the feedback effects, a small-or medium-gain amplifier module [2,12,13] is cascaded in series by using external waveguides (WGs) until a required gain is satisfied or a passive component such as an attenuator and filter is inserted between amplifier ICs for a multi-chip module applications [14]. However, these approaches lead to bulky and expensive mm-wave radio system due to expensive additional components.…”

Section: Introductionmentioning

confidence: 99%

Waveguide Integrated High-Gain Amplifier Module for Millimeter-Wave Applications

Lee¹

2015

PIER Letters

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Abstract-In this paper, a high-gain amplifier module has been presented for millimeter wave applications. In order to suppress oscillation of the high-gain amplification block, a rectangular waveguide (WG) is fully integrated into the metal case, on which a cascaded two-stage amplifier is mounted. Due to the integrated WG, additional microstrip line (MSL)-to-WG transitions are required. Therefore, a low-loss and wide-band WG-to-MSL transition is designed and fabricated on a 5 mil thick RT5880 substrate. Two sets of WG-to-MSL transitions in back-to-back structure are assembled in the metal case for the high-gain amplifier module and are characterized. The measured transition loss and operational return-loss (S 11 ) bandwidth less than −10 dB are less than −0.44 dB/a transition and 15.9 GHz from 34.1 to 50 GHz, respectively. The fabricated high-gain amplifier module shows a high gain over 39.7 dB from 38 to 41 GHz. At 38.7 GHz, its maximum gain of 44.25 dB is achieved.

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