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This letter demonstrates the use of a traditional screen printing approach for the fabrication of silicon field effect transistors. Using purely additive patterning technologies at room temperature conditions, with no additional postprocessing steps, transistors have been produced on paper substrates that have performance characteristics comparable to amorphous silicon thin film transistors. Insulated gate field effect transistors employing n type silicon in the semiconductor layer operate in accumulation mode with effective carrier mobilities in the range 0.3 to 0.7 cm2 (V s)−1.

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