Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials need to be identified, especially for low-temperature applications in electronics and devices. The material CsBi(4)Te(6) has been synthesized and its properties have been studied. When doped appropriately, it exhibits a high thermoelectric figure of merit below room temperature (ZT(max) approximately 0.8 at 225 kelvin). At cryogenic temperatures, the thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys.

The highly anisotropic material CsBi(4)Te(6) was prepared by the reaction of Cs/Bi(2)Te(3) around 600 degrees C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) A, b = 4.4025(1) A, c = 14.5118(3) A, beta = 101.480(1) degrees, V = 3250.75(11) A(3), and Z = 8. The final R values are R(1) = 0.0585 and wR(2) = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi(4)Te(6)] anionic layers and Cs(+) ions residing between the layers. The [Bi(4)Te(6)] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) A. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CsBi(4)Te(6) can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. SbI(3) doping resulted in p-type behavior and a maximum power factor of 51.5 microW/cm.K(2) at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 microW/cm.K(2) at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi(4)Te(6) and comparisons to those of p-type.

were synthesized by a molten flux method. The black needles of compound I were formed at 600°C and crystallized in the monoclinic P2 1 /m space group (No. 11) with a ) 17.492(3) Å, b ) 4.205(1) Å, c ) 18.461(4) Å, ) 90.49(2)°. The final R/R w ) 6.7/5.7%. Compound II is isostructural to I. Both I and II are isostructural with K 2 Bi 8 S 13 which is composed of NaCl-, Bi 2 Te 3 -, and CdI 2 -type units connecting to form K + -filled channels. The thin black needles of III and IV obtained at 530°C crystallize in the same space group P2 1 /m with a ) 17.534 (4) Å, b ) 4.206(1) Å, c ) 21.387(5) Å, ) 109.65(2)°and a ) 17.265(3) Å, b ) 4.0801(9) Å, c ) 21.280(3) Å, ) 109.31 (1)°, respectively. The final R/R w ) 6.3/8.3% and 5.1/3.6%. Compounds III and IV are isostructural and potassium and bismuth/antimony atoms are disordered over two crystallographic sites. The structure type is very closely related to that of I. Electrical conductivity and thermopower measurements show semiconductor behavior with ∼250 S/cm and ∼-200 µV/K for a single crystal of I and ∼150 S/cm and ∼-100 µV/K for a polycrystalline ingot of III at room temperature. The effect of vaccum annealing on these compounds is explored. The optical bandgaps of all compounds were determined to be 0.59, 0.78, 0.56, and 0.82 eV, respectively. The thermal conductivities of melt-grown polycrystalline ingots of I and III are reported.