Porous medium is a special type of material where voids are created in a solid medium. The introduction of pores into a bulk solid can profoundly affect its physical properties and enable

We present a study of semi-polar (1101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

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We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d² separation distance, which is dominated by the layer-to-layer dipole coupling.

A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.

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In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

Abstract-We presented a study of high-performance GaNbased light emitting diodes (LEDs) using a GaN nanopillars (NPs) structure grown on sapphire substrate by integrating RF-plasma molecular beam epitaxy (