Theoretical wave functions are analytically derived to characterize the propagation evolution of the Hermite-Gaussian (HG) beams transformed by a single-lens astigmatic mode converter with arbitrary angle. The derived wave functions are related to the combination of the rotation transform and the antisymmetric fractional Fourier transform. The derived formula is systematically validated by using an off-axis diode-pumped solid-state laser to generate various high-order HG beams for mode conversions. In addition to validation, the creation and evolution of vortex structures in the transformed HG beams are numerically manifested. The present theoretical analyses can be used not only to characterize the evolution of the transformed beams but to design the optical vortex beams with various forms.
A high-power efficient monolithic Nd:YAG 946-nm laser is demonstrated at the cryogenic temperature. By exploring the absorption and the fluorescence spectra of the Nd:YAG crystal, it reveals the fact that the absorption bandwidth at 808 nm is narrowing and the fluorescence intensity at 1061 nm is significant enhanced when the temperature is decreased. The temperature dependence of the lasing threshold at 946 nm is found to display a minimum value near a temperature of 170 K. At an incident pump power of 34.5 W, the local heating leads the optimum temperature to be approximately 120 K and the maximum output power can reach 24.4 W with the conversion efficiency of 71% as well as the slope efficiency up to 75%.
In this work, flip-chip ultraviolet light-emitting diodes (FCUV-LEDs) on patterned sapphire substrate (PSS) at 375 nm were grown by an atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A specialized reactive plasma deposited (RPD) AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the FCUV-LEDs with RPD AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the transmission electron microscopy (TEM) image, it can be observed that the tip and incline portion of the pattern was smooth using the RPD AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 7 × 10 7 cm −2 to 2.5 × 10 7 cm −2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The improvement of light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence measurement and numerical simulation confirm such increase of output power can be attributed to the improvement of material quality and light extraction.
In this study, high crystalline quality 30 μm thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 μm thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 μm thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 μm thick GaN template exhibit 26% enhancement of light output at 20 mA.
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