GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

Yeh, Ping-Cheng; Chang, Chia-Chan; Chen, Y. T.; Lin, Da-Wei; Liou, Jung-Shan; Wu, Ching-Chou; He, Jingliang; Kuo, Hao‐Chung

doi:10.1063/1.4972182

Cited by 47 publications

(26 citation statements)

References 18 publications

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“…3D). The measured lasing threshold is significantly lower compared to previously reported GaN VCSELs ( 22 , 26 , 27 , 40 , 60 , 61 ). An output power of ~12 μW was measured at an injection current density of ~1 kA/cm 2 under CW operation.…”

Section: Resultscontrasting

confidence: 66%

An electrically pumped surface-emitting semiconductor green laser

Rashid

Liu

et al. 2020

Sci. Adv.

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Section: Resultscontrasting

confidence: 66%

An electrically pumped surface-emitting semiconductor green laser

Rashid

Liu

et al. 2020

Sci. Adv.

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“…In 2016, Yeh et al proposed a low-threshold VCSEL with small divergence angle. [87] The VCSEL was featured by a Si-diffusion-defined current blocking layer, where a 3D current confinement structure could effectively prevent the current spreading laterally. The top DBR were 8-pair TiO 2 /SiO 2 with a maximum reflectivity of 99% and a stopband width of 120 nm.…”

Section: Hybrid Dielectric and Aln/gan Dbrmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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“…[1][2][3] In particular, III-nitride VCSELs have attracted much interest owing to their unique emission wavelengths (ultraviolet to green) for attractive applications, such as visible light communication, optical sensors, displays, and atomic clocks. [4][5][6][7][8][9] Reports of III-nitride VCSELs have consisted of hybrid epitaxial=dielectric 10,11) and dual dielectric DBR designs. [7][8][9][12][13][14] Both designs have required intracavity contacts, and indium tin oxide (ITO) has been the most commonly used material to improve lateral current spreading on the p-side.…”

Section: ++mentioning

confidence: 99%

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Lee

Forman

Lee

et al. 2018

Appl. Phys. Express

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We report the first demonstration of III-nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal-organic chemical vapor deposition (MOCVD). For the TJs, n ++ -GaN was grown on in-situ activated p ++ -GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of >15 mA (10 kA/cm 2 ), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

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GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

Cited by 47 publications

References 18 publications

An electrically pumped surface-emitting semiconductor green laser

An electrically pumped surface-emitting semiconductor green laser

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

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