We present a combined theoretical and experimental study of

We report surface-bound growth of single-wall carbon nanotubes (SWNTs) at temperatures as low as 350°C by catalytic chemical vapor deposition from undiluted C 2 H 2 . NH 3 or H 2 exposure critically facilitates the nanostructuring and activation of sub-nanometer Fe and Al/Fe/Al multilayer catalyst films prior to growth, enabling the SWNT nucleation at lower temperatures. We suggest that carbon nanotube growth is governed by the catalyst surface without the necessity of catalyst liquefaction.Carbon nanotubes (CNTs) have been a driving force for current advances in nanotechnology, both on an applied and on a fundamental level. Single-wall carbon nanotubes have shown the highest Young's modulus and highest axial thermal conductivity of any solid. Moreover, SWNTs have the highest current carrying capacity of any conductor, which makes them an attractive electronic, sensing, or heat sinking material for nano-electromechanical systems (NEMS) and future (hybrid) integrated circuitry. 1,2Defect-free SWNT synthesis is generally thought to require high temperatures (T). 3 This belief arises from the success of high-T deposition processes. Arc-discharge, laser ablation, and high-pressure CO conversion with inherent (local) temperatures in the order of 1000-4000°C have been optimized mainly for bulk CNT production. 3 For device fabrication, these techniques heavily rely on purification from other carbon allotropes and an indirect postgrowth assembly via stable suspensions. In comparison, catalytic chemical vapor deposition (CVD) allows selective, aligned CNT growth directly onto a substrate and thus presently is the only economically viable process for integrating CNTs into a device. 1,[4][5][6] This approach, however, exposes the substrate to the CNT growth temperature and atmosphere, which creates a need for less aggressive, low T processing conditions. Present back-end CMOS technology allows a maximum temperature of 400-450°C, the limit being set by the mechanical integrity of low dielectric constant intermetal dielectrics. 7 Thermal CVD of SWNTs has been reported at 550°C in furnace 8 and cold wall systems. 9 In situ environmental transmission electron microscopy (TEM) experiments show SWNT nucleation at 480°C. 10 Random-network FETs have been fabricated with SWNTs grown at 450°C by remote plasma-enhanced (PE) CVD.11 However, the high temperatures of bulk production techniques still dominate growth model considerations with the assumption that the catalyst cluster has to be liquefied and that the catalyst bulk is ratecontrolling.12,13 These considerations are also transferred to surface-bound CVD. 14 CNT growth below 500°C is not thought to be possible based on calculations of size-corrected melting points 14 and carbon saturation. 15In this Letter, we report SWNT growth at temperatures below 450°C by thermal CVD at cold wall conditions and demonstrate field effects in as-integrated SWNT FETs. We use evaporated thin catalyst films, which allow accurate patterning by standard lithography techniques and thus compa...

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast (∼2 μs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies.

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in results in a spin reorientation transition and an anisotropic ac susceptibility which is fully consistent with a simple single-domain model. The uniaxial and biaxial anisotropy constants vary, respectively, as the square and fourth power of the spontaneous magnetization across the whole temperature range up to . The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally assisted magnetization switching.

Restacking the exfoliated 2D layered materials into complex heterostructures with new functionality has opened a new platform for materials engineering and device application. In this work, graphene sandwiched p‐GaSe/n‐WS2 vertical heterostructures are fabricated for photodetection. The devices show excellent performance on photodetection from ultraviolet to visible wavelength range, including high photoresponsivity (≈149 A W−1 at 410 nm), short response time of 37 µs, and self‐powered photodetection. The scanning photocurrent microscopy is also employed to investigate the photocurrent generation in the heterojunction and a significant enhancement of the photoresponse is found in the overlapping region. The results suggest that the graphene sandwiched vertical heterojunctions are promising in future novel optoelectronic devices applications.

In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, Graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 μs, which is about 40 times faster than that of our InSe/metal device. And it can also be tuned by the back-gate voltage from 310 μs down to 100 μs. With high response speed, the photoresponsivity can reach as high as 60 AW -1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts could be important for high performance optoelectronic devices.

We observe low-field hysteretic magnetoresistance in a (Ga,Mn)As single-electron transistor which can exceed 3 orders of magnitude. The sign and size of the magnetoresistance signal are controlled by the gate voltage. Experimental data are interpreted in terms of electrochemical shifts associated with magnetization rotations. This Coulomb blockade anisotropic magnetoresistance is distinct from previously observed anisotropic magnetoresistance effects as it occurs when the anisotropy in a band structure derived parameter is comparable to an independent scale, the single-electron charging energy. Effective kinetic-exchange model calculations in (Ga,Mn)As show chemical potential anisotropies consistent with experiment and ab initio calculations in transition metal systems suggest that this generic effect persists to high temperatures in metal ferromagnets with strong spin-orbit coupling.