Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, K. W.; Sheng, Yu; Bao, Zhenan; Zhang, Nan; Liu, Shuai; Zheng, Hang; Wang, Kaiyou

doi:10.1038/nmat4886

Cited by 434 publications

(217 citation statements)

References 30 publications

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“…Cai et al . reported that the polarization of PMN‐PT ferroelectric substrates can be used to control the spin–orbit torque in the absence of an external magnetic field in a PMN‐PT/Pt/CoNiCo/Pt system, as shown in Figure a.…”

Section: Manipulation Of Magnetic Materials By Spin–orbit Torquesmentioning

confidence: 99%

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Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

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The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, spintronics, and nonvolatile memories. In recent years, the discovery of spin–orbit torque has opened a spectrum of opportunities to manipulate the magnetization efficiently. This article presents a review of the historical background and recent literature focusing on spin–orbit torques (SOTs), highlighting the most exciting new scientific results and suggesting promising future research directions. It starts with an introduction and overview of the underlying physics of spin–orbit coupling effects in bulk and at interfaces, and then describes the use of SOTs to control ferromagnets and antiferromagnets. Finally, the prospects for the future development of spintronic devices based on SOTs are summarized.

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Section: Manipulation Of Magnetic Materials By Spin–orbit Torquesmentioning

confidence: 99%

“…Magnetization switching induced by the polarization of PMN‐PT substrate. a) The structure of the device; b,c) the deterministic magnetization switching after applying 500 and −500 V. Reproduced with permission . Copyright 2017, Nature Publishing Group.…”

Section: Manipulation Of Magnetic Materials By Spin–orbit Torquesmentioning

confidence: 99%

Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

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“…The other is that an additional symmetry-breaking field is required for the deterministic switching of perpendicular magnetization. As a result, much effort has been expended in realizing field-free SOT switching at a low current [17][18][19][20][21][22][23] .…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit Torque Switching of Perpendicular Magnetization in Ferromagnetic Trilayers

Lee

2020

Sci Rep

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In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque switching, offering a possibility for high-density and low-power spinorbit torque devices. Moreover, we provide analytical expressions of the switching current for an arbitrary spin polarization direction, which will be useful to design spin-orbit torque devices and to interpret spin-orbit torque switching experiments.

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“…On the other hand, ferromagnetic SRO is widely used as an electrode for thin films such as ferroelectrics [25]. Considering that magnetoelectric heterostructures consisting of ferromagnetic and ferroelectric elements have recently aroused great interest due to their promising applications [26][27][28], the presence of NM grain boundaries in the FM SRO layers is expected to significantly change the interfacial magnetoelectric coupling.…”

Section: Discussionmentioning

confidence: 99%

Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary

Yin

Lai

et al. 2020

National Science Review

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Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

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Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Cited by 434 publications

References 30 publications

Manipulation of Magnetization by Spin–Orbit Torque

Manipulation of Magnetization by Spin–Orbit Torque

Spin-orbit Torque Switching of Perpendicular Magnetization in Ferromagnetic Trilayers

Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary

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