GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.7567/apex.11.062703

Cited by 56 publications

(29 citation statements)

References 24 publications

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“…was used as intracavity current spreading layer and has the highest absorption coefficient out of all the layers in the cavity. Recent developments in GaN-based TJs grown in either MBE or MOCVD [81,89,90], have shown promising results in terms of enhanced lateral current spreading and lowering the total internal loss. The TJ based intracavity contact can seamlessly be applied to our existing device architecture.…”

Section: Resultsmentioning

confidence: 99%

“…In the past, nonpolar VCSELs have been exclusively studied by a research group at the University of California, Santa Barbara [76,78,80,81,83,89,90]. Their device design involves the flip-chip approach using PEC etching for controlling the cavity length and transfer devices to a submount.…”

Section: Electrically Injected Nonpolar Vcsel Using Nanoporous Dbrsmentioning

confidence: 99%

“…The p-side spreading resistance within the ITO was estimated to be ~13 Ω which is almost half of the total series resistance. The spreading resistance can be improved dramatically by incorporating a GaN-based TJ in place of the ITO as a current spreading layer [81,90] lowering to ~3 Ω, based on the reported lateral resistivity of the TJs. Additionally, increasing the thickness of the n+GaN contact layer on the n-side and increasing the doping concentration would further reduce the resistance.…”

Section: Optoelectronic Characteristicsmentioning

confidence: 99%

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Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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I am grateful to many people for making this work possible. First and foremost, I would like to thank my advisor Prof. Daniel Feezell for his dedicated guidance and support. Early on in my degree, I remember him mentioning that VCSEL projects are always of high risk and high reward. For the longest time, I doubted myself on whether I would be able to fulfill all the project requirements. But, Prof. Feezell believed in my ability and urged me to push forward which ultimately lead to groundbreaking results from my VCSEL project. Not only did I learn a ton from his vast knowledge on IIInitride materials and devices, his constructive criticisms greatly improved the quality of my work and allowed me to grow as a researcher. Next, I am thankful to my committee members and collaborators, Prof. Ganesh Balakrishnan, Prof. Sang Han, and Dr. Ting Luk for their time and suggestions. Their valuable insight on optical, electrical, and mechanical properties of semiconductors helped me tremendously in understanding the material characteristics and device performance of my VCSELs. I cannot express the immense gratitude I feel for my fellow group members, both past and present. All of whom have helped me towards the completion of my PhD in some way or another. Many thanks to Ashwin, Morteza, Mohsen, and Mike for introducing me to MOCVD and for taking care of my growths when I was busy doing something else. Discussions regarding fabrication with Andrew, Mahmoud, Rhett, Kenny, Farnood, and Abdel have always helped me in developing processes very v quickly and reliably. I am also grateful to Serdal, Arman, and Isaac for assisting me in various material and device related characterizations. Many of the accomplishments mentioned in this thesis could not have been possible without the support of the technical and/or administrative staff. As such, I am forever indebted to the ECE, CHTM, and CINT staff members for putting up with my numerous requests and questions throughout the years. Beyond the appreciation of the technical side of things, I would like to thank all my friends from back home and the ones I made during the course of my study. They were always there to lend a helping hand or to simply distract me from work whenever graduate student life became too overwhelming. Furthermore, I must also acknowledge the Bangladeshi community here at UNM for making Albuquerque feel like home, even though my real home is halfway around the world. Looking back, I will forever cherish these memories. Last, but certainly not least, I would like to thank my parents, my older sister, and my younger brother. I would not be where I am at today without their unconditional love and encouragement. They have sacrificed a lot so that I can pursue a career of my choice, even if it meant me being away from home for an extended period time. I only hope that the work I performed in this thesis is substantial enough to repay them and make them proud. vi

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Section: Resultsmentioning

confidence: 99%

Section: Electrically Injected Nonpolar Vcsel Using Nanoporous Dbrsmentioning

confidence: 99%

Section: Optoelectronic Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Mishkat-Ul-Masabih

Aragon

Monavarian

et al. 2020

Gallium Nitride Materials and Devices XV

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“…VCSELs were designed for high-speed, high-performance communication applications, and have great interest for coarse wavelength-division multiplexing (CWDM) band applications in optical fiber communication technology. All epitaxial layers were grown using either molecular beam epitaxy MBE (Jewell et al, 2008) or metal organic chemical vapour deposition MOCVD technique (Lee et al, 2018), showing flexibility in growing precision controlled layers and in wafer fabrication.…”

Section: Methodsmentioning

confidence: 99%

Performance Characteristics of Conventional Vertical Cavity Surface Emitting Lasers VCSELs at 1300 nm

2019

ZJPAS

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Vertical-cavity surface emitting lasers (VCSELs) are interesting devices because of their low-cost manufacturing and testing methods, circularly shaped output beam for high coupling efficiency and suited for use in fiber-optic networks and as optical interconnects. In this paper, experimental results of output light-current-voltage (LIV), optically pumped VCSELs operating at 1320 nm wavelength are presented. The commercial device is biased just below threshold current of 0.84 mA under pump power of 1 mW. An amplified gain at around 20 dB is obtained. In addition, the influence of temperature on the performance of the device is studied.

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“…However, the high absorption loss of ITO can lead to significantly higher threshold currents and lower light outputs [17,18]. In this work, the numerical simulation was performed via Crosslight software Photonic Integrated Circuit Simulator in 3D (PICS3D) on tunnel junction (TJ) structure GaN VCSELs [19][20][21] as well as an ITO based VCSEL which we had used before [16]. The experimental and modeling results demonstrate that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Shen

Yeh

et al. 2019

Crystals

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In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

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GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Cited by 56 publications

References 24 publications

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Performance Characteristics of Conventional Vertical Cavity Surface Emitting Lasers VCSELs at 1300 nm

Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

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