An electrically pumped surface-emitting semiconductor green laser

Ra, Yong–Ho; Rashid, Roksana Tonny; Liu, Xianhe; Sadaf, Sharif Md.; Mashooq, Kishwar; Mi, Zetian

doi:10.1126/sciadv.aav7523

Cited by 85 publications

(75 citation statements)

References 83 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…also be readily achieved using photonic crystal structure designed to operate at Γ point. [74] Figure 7a shows the schematic of light scattering in the reciprocal space of a photonic crystal structure. Six Γ' points are coupled by the Bragg grating vectors K 1 and K 2 , which leads to standing wave resonant in the photonic crystal structure and eliminates the need for extra mirrors for optical feedback in the X-Y plane.…”

Section: Surface-emitting Laser Diodesmentioning

confidence: 99%

See 2 more Smart Citations

Emerging Applications of III‐Nitride Nanocrystals

Liu

Chowdhury

Vanka

et al. 2020

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Recently, significant progress has been made in III-nitride nanocrystals. They exhibit unique structural, electronic, optical, and photocatalytic properties, and have emerged as a functional platform to realize high-performance optoelectronic, electronic, quantum, and solar energy devices. Compared with conventional III-nitride epilayers and quantum wells, dislocation-free III-nitride nanocrystals can, in principle, be achieved on lattice mismatched foreign substrates due to the efficient surface strain relaxation. In this Feature Article, the authors discuss the epitaxy, characteristics, and some emerging device applications of III-nitride nanocrystals grown by plasma-assisted molecular beam epitaxy.

show abstract

Section: Surface-emitting Laser Diodesmentioning

confidence: 99%

Section: Aln and Algan Uv Leds And Laser Diodesmentioning

confidence: 99%

See 1 more Smart Citation

Emerging Applications of III‐Nitride Nanocrystals

Liu

Chowdhury

Vanka

et al. 2020

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…For instance, Wang et al [343] recently reported a record-breaking net mode gain of up to 980 cm −1 in CsPbBr 3 nanorodbased gain media with a diameter of ∼5.8 nm and a length of ∼26 nm using an intermediate monomer reservoir synthetic strategy. Similarly, group-III nitrides have benefitted from low-dimensionality nanostructures such as the previously discussed QDs [314,378] and nanorods or nanowires [4,327,379].…”

Section: Low Dimensionality Nano/microstructuresmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

show abstract

“…SAG is a combination of a top-down method for the nanoscale patterning of growth mask coupled with bottom-up epitaxy on the previously defined template used for creating regular arrays of NRs. The SAG process has been employed for the successful growth of III-nitride NR devices [18][19][20][21][22][23][24][25] and photonic crystal structures [26,27].…”

Section: Introductionmentioning

confidence: 99%

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

et al. 2020

View full text Add to dashboard Cite

Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. A liquid Ga target was sputtered in a mixture gas of Ar and N2, ranging the N2 partial pressure (PN₂) ratio from 100% to 50%. The growth of NRs shows a strong correlation with PN₂ on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically with PN₂. The PN₂ ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When the PN₂ ratio was below 80%, multiple NRs were formed in the nanoholes. For a PN₂ ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon the PN₂ ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model.

show abstract

An electrically pumped surface-emitting semiconductor green laser

Abstract: Ultrasmall semiconductor lasers can improve the efficiency and resolution of next-generation displays by 10 to 100 times.

Cited by 85 publications

References 83 publications

Emerging Applications of III‐Nitride Nanocrystals

Emerging Applications of III‐Nitride Nanocrystals

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

Contact Info

Product

Resources

About