Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Abstract

Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN

“…Not found in nature man-made metal and metalloid nitrides have already confirmed their utmost utility in modern technology with a noticeable share in common-day applications including Blu-ray devices and efficient LED laser and light sources [ 1 , 2 , 3 , 4 ]. Many of them are semiconductors, and examples include the wide-bandgap semiconductor gallium nitride GaN, E g = 3.4 eV for hexagonal polytype and 3.2 eV for cubic polytype, the narrow-bandgap indium nitride InN, E g = 0.7–0.8 eV, and their intermediate-bandgap binary solid solutions of In x Ga 1−x N with E g = 0.7–3.4 eV and Al x Ga 1−x N with E g = 3.4–6.2 eV [ 5 ].…”

“…Other nitride materials that receive considerable attention are boron nitride BN [ 8 ] and silicon nitride Si 3 N 4 [ 9 ]. Many foreseen uses of complex nitrides, i.e., alloyed or composite, utilize the synergy of coexisting electronic and mechanical/thermal properties [ 1 , 2 , 3 , 4 , 10 ]. In this regard, one of the relatively not yet in-depth investigated composite nitride systems is made of GaN and TiN, with a potentially attractive set of combined optical, electronic, and mechanical properties.…”

An Instantaneous Recombination Rate Method for the Analysis of Interband Recombination Processes in ZnO Crystals

“…This is particularly valid in regard to semiconductors relevant for their light-emitting and/or photocatalytic and/or gas-sensing properties. The validity of this statement is quite evident in regard to the light-emitting properties, as the efficiency of interband PL is a prerequisite for achieving efficient amplified spontaneous emission and lasing [13].…”

Structural, electronics, magnetic, optical, mechanical and hydrogen storage properties of Ga‐based hydride‐perovskites X GaH 3 ( X = K, Li)

“…Similarly, the halide-perovskites have emerged as an excellent option for solar cells in the recent days. [19][20][21][22][23][24] When we replace X with hydrogen in ABX 3 , it becomes a hydrideperovskite with general formula ABH 3. 25,26 The key issue in using hydrogen as a fuel is its storage as it is difficult to store hydrogen due to various reasons.…”