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The diffusivity of Mn in CdTe, D(Mn), has been measured between 500 and 800 "C under saturated Cd and Te condaions. The variation of D(Mn) with Cd partial pressure was measured at 600 'C. Between 500 and 800 "C D(Mn) = (22.5: 3.30)exp [(-(2.35 for saturated Te, and between 600 and 800 "C for saturated Cd D(Mn) = (1.12:9,12) x 1O3exp(-(2.76i0.18)eV/kT) cm2 s-', These results are consistent with those at 600 "C which show D(Mn) to increase with decreasing Cd partial pressure. It is argued that lhe observed features of D(Mn) can be best accounted for in terms of a V& diffusion mechanism.

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The diffusion model of Chandra et a/ for As in MCT is developed to obtain a relation giving the As diffusivity as a function of temperature and Hg pressure over the MCT existence range. Very satisfactory fi? are achieved with experimental data. A quantitative expression for [fiH,]/[AsTe] as a function of temperature and Hg pressure is also obtained.

The solubility and diffusivity of In in CdTe has been investigated in the temperature range 200-850 degrees C, under Cd-rich and Te-rich conditions, using a radiotracer method. The diffusivity is independent of In concentration and below 400 degrees C is also largely independent of temperature. Above 400 degrees C the solubility and diffusivity depend on both temperature and non-stoichiometry. At Te saturation D(In)=6.48*10-4 exp(-1.15 eV/kT) cm2 s-1 and at Cd saturation D(In)=117 exp(-2.21 eV/kT) cm2 s-1. The results are discussed in terms of the defect chemistry of CdTe.

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