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Modification of Hg1−Cd Te and related materials by ion-beam treatment

“…Table 1 Electrical properties of Hg 1−x Cd x Te layers subjected to IBT The observed relation between h and x is in a good agreement with the diffusion model [3,[10][11][12] of conductivity type conversion in HgCdTe under IBT. This model states that the conversion is due to the diffusion of interstitial mercury atoms Hg I , which are freed at the surface of the crystal sputtered by ion treatment.…”

Mechanisms of conductivity conversion in extrinsically and intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling

“…It is generally accepted that the conversion is accelerated because IBM or RIE induce the near-surface mercury diffusion source with an extremely high effective concentration of mercury interstitials (Hg I ). This concentration amounts to 10 13 to 10 14 cm −3 [1] exceeding in many times the Hg I concentration usually obtained under annealing in the saturated mercury vapour at the same temperature. The mechanism explaining the creation of such diffusion source has been developed and described in [2,3].…”

Comparison of electrical properties of HgCdTe subsurface layers formed by low energy ion beam milling or anodic oxidation

“…In both these techniques, similar to thermal annealing in mercury vapour, which has been more profoundly studied, [1] the conversion of the socalled vacancy-doped material is thought to happen through the diffusion of mercury interstitials (Hg I ) from a surface source and their recombination with cationic vacancies (V Hg ) in the bulk. [2,3] This process is noticeably complicated in an impuritydoped material, where results depend not only on the selected impurity but also on the defect.…”