The diffusion of Mn in CdTe

Jamil, Nawfal Y.; Shaw, D.

doi:10.1088/0268-1242/10/7/009

Cited by 24 publications

(35 citation statements)

References 15 publications

(1 reference statement)

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“…[60] The last value considerably exceeds the band-gap of CdTe, Fig. 1 The best linear fits to the yield of solute-diffusion data collected in [4] : DE = 1.5 eV, confirming the existence of diffusing atoms in an excited state with the energy for the process that is much larger than that of a typical excitation.…”

Section: Diffusion Of Foreign Impurities In Cdtementioning

confidence: 68%

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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Understanding of self-and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D 0 exp(2DE a /kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0 , and the activation energy, DE a , of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Section: Diffusion Of Foreign Impurities In Cdtementioning

confidence: 68%

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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“…While in synthetic systems the diffusion of the trace element (Mn) in semiconductors (CdSe) around temperature of 300 °C is negligible, 1-3 Å in short time (1 h) (Jamil and Shaw 1994), the equilibration and homogeneous distribution of the trace element within individual nanoparticles can be achieved over the geological time scale (Reich et al 2006;Deditius et al 2008;González-Jiménez et al 2015). Moreover, it was found that the formation of trace element-rich semiconducting NPswith homogeneously distributed doping element-is possible when the trace element is adsorbed on the growing surface of the nanocrystal (Erwin et al 2005).…”

Section: And References Therein) Substitution Of As For S In the Tetmentioning

confidence: 99%

Constraints on the solid solubility of Hg, Tl, and Cd in arsenian pyrite

Deditius

Reich²

2016

American Mineralogist

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Arsenic-rich (arsenian) pyrite can contain up to tens of thousands of parts per million (ppm) of toxic heavy metals such as Hg, Tl, and Cd, although few data are available on their solid solubility behavior. When a compilation of Hg, Tl, and Cd analyses from different environments are plotted along with As in a M(Hg, Tl, and Cd)-As log-log space, the resulting wedge-shaped distribution of data points suggests that the solid solubility of the aforementioned metals is strongly dependent on the As concentration of pyrite. The solid solubility limits of Hg in arsenian pyrite-i.e., the upper limit of the wedge-shaped zone in compositional space-are similar to the one previously defined for Au by ), whereas the solubility limit of Tl in arsenian pyrite is approximated by a ratio of Tl/As = 1. In contrast, and despite a wedge-shaped distribution of Cd-As data points for pyrite in Cd-As log-log space, the majority of Cd analyses reflect the presence of mineral particles of Cd-rich sphalerite and/or CdS. Based on these data, we show that arsenian pyrite with M/As ratios above the solubility limit of Hg and Tl contain nanoparticles of HgS, and multimetallic Tl-Hg mineral nanoparticles. These results indicate that the uptake of Hg and Tl in pyrite is strongly dependent on As contents, as it has been previously documented for metals such as Au and Cu. Cadmium, on the other hand, follows a different behavior and its incorporation into the pyrite structure is most likely limited by the precipitation of Cd-rich nanoparticulate sphalerite. The distribution of metal concentrations below the solubility limit suggests that hydrothermal fluids from which pyrite precipitate are dominantly undersaturated with respect to species of Hg and Tl, favoring the incorporation of these metals into the pyrite structure as solid solution. In contrast, the formation of metallic aggregates of Hg and Tl or mineral nanoparticles in the pyrite matrix occurs when Hg and Tl locally oversaturate with respect to their solid phases at constant temperature. This process can be kinetically enhanced by high-to-medium temperature metamorphism and thermal processing or combustion, which demonstrates a retrograde solubility for these metals in pyrite.

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“…In particular, one might expect that confinement could have a similar prominent effect on the diffusion of magnetic impurities in nanocrystals. Although it is known that the diffusion of Mn in bulk CdTe is very slow, with the overall diffusion barrier estimated experimentally to be more than 2 eV [10], diffusion in a nanosystem might be strongly modified by changes in the electronic structure as well as the much larger surface-to-volume ratio in nanocrystals when compared to bulk crystals.…”

mentioning

confidence: 99%

“…A detailed diffusion mechanism of Mn defects in CdSe nanocrystal is not clearly known; however, experiment has suggested that the diffusion of Mn atoms in bulk CdTe [10] and GaAs [19] involves interstitial defects. Thus, our work centers on the behavior of interstitial Mn atoms.…”

mentioning

confidence: 99%

Role of Confinement on Diffusion Barriers in Semiconductor Nanocrystals

et al. 2009

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We find that quantum size effects not only play an important role in the electronic properties of defects in semiconductor nanocrystals, but also strongly affect the incorporation of defect atoms into the nanocrystals. In particular, using ab initio methods based on density functional theory, we predict that Mn defects will be energetically driven towards the surface of CdSe and ZnSe nanocrystals, and that the diffusion barrier of a Mn interstitial defect in a CdSe nanocrystal will be significantly lower than that in the bulk.

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The diffusion of Mn in CdTe

Cited by 24 publications

References 15 publications

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Constraints on the solid solubility of Hg, Tl, and Cd in arsenian pyrite

Role of Confinement on Diffusion Barriers in Semiconductor Nanocrystals

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