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High temperature in-situ Hall effect measurements in CdTe single crystals grown by different techniques at 500-1,200 K under well-defined Cd and Te vapor pressure were made. It was established that native point defects (PD) Cd 21 i and V 21 Te are dominant at T . 770 K in Cd-rich CdTe. Their formation enthalpies were determined (DH V 21 Te 5 1.3 eV; DH Cd 21 i 5 2.5 eV). It was shown that V 21 Te dominate at low temperatures and Cd 21 ibegin to prevail at T . 930 K. In Te-saturated CdTe at heating up to ;800 K, the hole density was Te vapor pressure independent. At higher temperatures (HT), the conductivity changed to intrinsic type, turning then into n-type. The results were explained in the framework of Krö ger's quasichemical formalism assuming the presence of an electrically active foreign point defect, the oxygen acceptor. The PD structure modeling demonstrated satisfactory agreement with experimental results both for temperature and component vapor pressure dependencies.

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