2015
DOI: 10.1016/j.physb.2015.10.008
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Growth, structure and optical properties of Tl4HgBr6 single crystals

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Cited by 15 publications
(26 citation statements)
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“…All compounds under investigation are direct band gap semiconductors and reveal a pronounced anisotropy in crystallographic directions that are parallel or perpendicular to the c ‐axis. The band gap values for Tl 4 HgI 6 , Tl 4 HgBr 6, and TlHgCl 3 are found to be 2.15, 2.43, and 2.74 eV, respectively …”
Section: Introductionmentioning
confidence: 94%
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“…All compounds under investigation are direct band gap semiconductors and reveal a pronounced anisotropy in crystallographic directions that are parallel or perpendicular to the c ‐axis. The band gap values for Tl 4 HgI 6 , Tl 4 HgBr 6, and TlHgCl 3 are found to be 2.15, 2.43, and 2.74 eV, respectively …”
Section: Introductionmentioning
confidence: 94%
“…The Bridgman–Stockbarger method was used to grow Tl 4 HgI 6 and Tl 4 HgBr 6 crystals. Initial mixture in all cases consisted of binary halogenides that were obtained and purified using a technique similar to our previous research . Because of the incongruent melting type for Tl 4 HgBr 6 , the composition of the starting material for the growth was selected from its primary crystallization field and amounted to 70 mol.% TlBr and 30 mol.% HgBr 2 , in which the excessive HgBr 2 was used as a solvent.…”
Section: Samples Experimental and Calculation Techniquesmentioning
confidence: 99%
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