IV group dopant compensation effect in CdTe

Panchuk, O.; Savitskiy, Andrey; Fochuk, P.; Nykonyuk, Ye.; Parfenyuk, O. A.; Shcherbak, L.; Ілащук, М. І.; Yatsunyk, Liliya A.; Feychuk, P.

doi:10.1016/s0022-0248(98)00798-2

Cited by 69 publications

(48 citation statements)

References 3 publications

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“…Several university groups are studying compensation-doping schemes using impurities that introduce deep levels close to the middle of the band gap such as column IV (Ge, Sn) and transition metal elements [20,21]. These compensation schemes typically produce an order of magnitude lower electron lifetimes than it is usually achieved in the industry (~ 3×10 -6 s).…”

Section: Electrical Compensationmentioning

confidence: 99%

CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applications

Szeles

2004

Physica Status Solidi (b)

374

213

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PACS 71.55. Gs, 72.20.Jv, 72.80.Ey, 81.05.Dz, 85.60.Gz Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance.1 Introduction Semi-insulating CdTe and CdZnTe have long been known to have great potential in room-temperature X-ray and gamma ray semiconductor detector applications [1,2]. The high atomic number and density of these compounds provide strong absorption and high detection efficiency of highenergy photons. The wide band gap of the materials allows the fabrication of highly resistive devices enabling large depletion depths and low leakage currents, when the material is brought into the semiinsulating state with electrical compensation techniques. The moderately high mobility and lifetime of charge carriers (particularly electrons) allow good charge transport in devices depleted to many mm or even cm thickness. The full potential of these compounds for high-energy photon detection applications, however, was not exploited for many decades due to the limited commercial availability of high-quality crystals. This situation has changed dramatically during the mid nineties with the emergence of few small companies committed to the advancement and commercialisation of the Cd 1-x Zn x Te based radiation detector technology. Today, Cd 1-x Zn x Te radiation detectors and detection systems find applications in industrial monitoring, gauging and imaging, medical imaging, nuclear safeguards and nonproliferation, transportation security and safety, as well as in a range of scientific applications.In this paper we will give a short review of the status of Cd 1-x Zn x Te-based X-ray and gamma ray radiation detector technology. First we will discuss the material requirements posed by the design criteria of room temperature semiconductor detectors. We will continue with the crystal growth and device fabrication challenges faced in the manufacturing of high-quality Cd 1-x Zn x Te radiation detectors.

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Section: Electrical Compensationmentioning

confidence: 99%

CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applications

Szeles

2004

Physica Status Solidi (b)

374

213

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“…• Vanadium and germanium for the growth CdTe and (Cd,Zn)Te for application of the photo-refractive effect [13,14].…”

Section: Introductionmentioning

confidence: 99%

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10 10 Ωcm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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“…The large amount of VGFSn1 crystal is semi-insulating (SI). Its resistivity increase rapidly along the growth direction and then remains constant near 7 -8× 10 9 Ω·cm. In VGFSn2 the resistivity increases more slowly and attains the SI only at the end of the crystal ingot.…”

Section: Resultsmentioning

confidence: 99%

“…Previously, the preparation of SI CdTe doped with Ge and Sn, which create the deep donor levels, was reported [9]. However, a high resistivity was obtained with high density of doping defects, which resulted in a high concentration of trapping and recombination centers and, therefore, poor detection ability [10].…”

Section: Introductionmentioning

confidence: 99%

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

Turkevych¹,

Grill

Franc

et al. 2003

Cryst. Res. Technol.

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Thermodynamic conditions for post-growth annealing to prepare near stoichiometric semi-insulating CdTe are studied for undoped, and Sn and Ge-doped single crystals. The main aim of the annealing procedure was to obtain high resistive material with the minimal concentration of native and foreign defects. The high temperature (200 -1000 °C) in-situ conductivity σ and Hall effect measurements were used to control the native defect density and to determine the Cd pressure p Cd at which shallow defects are compensated. It is shown that contrary to the undoped samples in which the change of the type of conductivity by variations of p Cd is easy, the Sn-and Ge-doped samples exhibit a much more stable behavior due to the Sn (Ge) selfcompensation. It was found that: the temperatures near 500 °C is optimum for the real-time annealing of bulk samples, the chemical diffusion is sufficiently fast at these temperatures while the uncontrolled change of defect density distribution during the subsequent cooling process is minimized. The time-dependent charge measurement technique was used to characterize the room-temperature specific resistivity distribution in the as-grown crystals, which indirectly controls the dynamic of solidification process. This allows us to consider the specific resistivity distribution along the growth direction of each crystal in terms of superposition of segregation and self-compensation phenomena.

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IV group dopant compensation effect in CdTe

Cited by 69 publications

References 3 publications

CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applications

CdZnTe and CdTe materials for X‐ray and gamma ray radiation detector applications

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Preparation of semi‐insulating CdTe doped with group IV elements by post growth annealing

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