General Features of Diffusion in Semiconductors

Diffusion of Mn in gallium arsenide

“…In GaAs, the concentration of ionized gallium vacancy increases with the position of Fermi level; the highest concentration, due to lowest formation energy is observed for triple ionized gallium vacancy V Ga 3− [8]. As it is shown in Fig.…”

Self‐ and impurity diffusion in Ge and Si

“…A precisely similar approach to that for self-diffusion can be followed so that for a vacancy or interstitialcy mechanism, or indeed a mixture of the two, the resultant impurity diffusivity, Dimp, is quite generally expressed by [8] where D x , Dr', and Dr' now refer to the impurity diffusivities associated with the particular charge states of the native defect under intrinsic conditions. Whereas in self-diffusion th.e correlation factor is a constant for a given diffusion mechanism (i.e.independent of defect charge state), the correlation factors contained in each term on the rtight-hand side of (2.10) will in general depend on the charge state even for the stme diffusion mechanism.…”

“…J . (2.4) If the diffusion mechanism is an interstitial one, either direct or indirect, it can be shown [8] that equation (2.4) still applies if D , D', and D' now refer t o the interstitial charge states and the appropriate correlation factors are included. The presence of multiply ionised defect charge states is readily taken into account by including ternis comprising a diffusivity factor multiplied by (n/ni)r for an acceptor or by (ni/n)r for a donor, where r is the multiplicity of the ionised state.…”

A novel method for incorporating fission gas elements into solids

“…2 (this report) and in Ref. [10] are striking, considering that the sample histories are completely different. Van den Berghe et al [12] attributed their banded microstructure to the formation of regularly-spaced bubbles or voids within the U(Mo) matrix.…”

“…The diffusion coefficient of Xe in carbon can be determined by fitting the experimentally-measured Xe depth profile with the analytical solution of Fick's equation for impurity diffusion from a constant source [10]:…”