Diffusion of Mn in gallium arsenide

Jakieła, R.; Barcz, A.; Wegner, E.; Zagojski, A.

doi:10.1016/j.jallcom.2005.12.053

Cited by 8 publications

(11 citation statements)

References 10 publications

(11 reference statements)

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“…The Be profiles for samples annealed at different temperatures (see Figs 1b and 2) all exhibit a visible drop (kink). Similar behavior was already observed for diffusion of Zn in GaAs [22], Zn in InP [23], and Mn in GaAs [24]. As shown, the change in the SIMS profile shape indicates that the diffusion coefficient depends on the concentration of the studied element.…”

Section: Resultssupporting

confidence: 82%

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Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła

Gas

Sawicki

et al. 2019

Journal of Alloys and Compounds

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Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion.The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.

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Section: Resultssupporting

confidence: 82%

“…Zn in InP [23], and Mn in GaAs [24]. As shown, the change in the SIMS profile shape indicates that the diffusion coefficient depends on the concentration of the studied element.…”

Section: Discussionmentioning

confidence: 78%

Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła

Gas

Sawicki

et al. 2019

Journal of Alloys and Compounds

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“…18 In the zincblend lattice there are three possible interstitial sites: two tetrahedral sites, which are surrounded by four cations or four anions, and one hexagonal site. Recently, Jakieła et al proposed that the Mn atoms are diffused into GaAs through interstitial sites.…”

Section: Resultsmentioning

confidence: 99%

“…It is supposed that these obtained Mn 2p XPS and 3d PDOS contain some contribution from interstitial Mn atoms (Mn I ). Recently, Jakie la et al proposed that the Mn atoms are diffused into GaAs through interstitial sites [18]. In the zinc-blende lattice there are three possible interstitial sites, two tetrahedral sites, which are surrounded by four cations or four anions, and one hexagonal site [19].…”

mentioning

confidence: 99%

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

Osafune

Song

Hwang

et al. 2008

Journal of Applied Physics

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A study of the growth of Lu 2 O 3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy Appl.We have performed a depth profile study of thermally diffused Mn/GaAs ͑001͒ interfaces using photoemission spectroscopy combined with Ar + -ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2p core-level and Mn 3d valence-band spectra of the Mn/GaAs ͑001͒ sample heated to 600°C were similar to those of Ga 1−x Mn x As, zinc-blend-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn atoms do not form any metallic compounds but are tetrahedrally coordinated by ligand atoms, and Mn 3d states are hybridized with ligand orbitals lized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.

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“…Such characteristic profiles appear in the case of various dopants in various crystal materials and indicate that the atom diffusion is determined by an additional factor reducing the atom mobility [59][60][61][62]. The influencing factors can be level of dopant trapping defects resulting from the Fermi level, the charge state of defects affecting they mobility, which may also result from the Fermi level or as in the case SiC, the dopant forming complexes with diffusing atoms.…”

Section: Hydrogen Properties In Sicmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Diffusion of Mn in gallium arsenide

Cited by 8 publications

References 10 publications

Diffusion of Mn in gallium nitride: Experiment and modelling

Diffusion of Mn in gallium nitride: Experiment and modelling

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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