Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła, R.; Gas, Katarzyna; Sawicki, M.; Barcz, A.

doi:10.1016/j.jallcom.2018.08.263

Cited by 16 publications

(8 citation statements)

References 60 publications

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“…In the absence of mobile carriers, the randomly distributed Fe

ions, despite their high spin state (

), do not interact in the relevant temperature range between 2 K and 400 K and exhibit paramagnetic properties. Due to the high diffusivity of transition metal ions in GaN, these paramagnetic ions are found diffusing a few hundreds of nanometres below the Fe-

-doped layer [ 39 ]. This substantially increases the total amount of the dilute Fe

, making the intensity of the paramagnetic signal at low temperatures comparable to the one of the ferromagnetic NCs.…”

Section: Resultsmentioning

confidence: 99%

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeyN Nanocrystals Embedded in GaN

et al. 2020

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Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of GaδFeN layers with FeyN embedded nanocrystals (NCs) via AlxGa1−xN buffers with different Al concentration 0<xAl<41% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped ε-Fe3N NCs takes place. Already at an Al concentration xAl≈ 5% the structural properties—phase, shape, orientation—as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic γ’-GayFe4−yN nanocrystals in the layer on the xAl=0% buffer lies in-plane, the easy axis of the ε-Fe3N NCs in all samples with AlxGa1−xN buffers coincides with the [0001] growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

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“…In the absence of mobile carriers, the randomly distributed Fe

ions, despite their high spin state (

-doped layer [ 39 ]. This substantially increases the total amount of the dilute Fe

, making the intensity of the paramagnetic signal at low temperatures comparable to the one of the ferromagnetic NCs.…”

Section: Resultsmentioning

confidence: 99%

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeyN Nanocrystals Embedded in GaN

et al. 2020

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“…All the values of the determination coefficient determined by the inter-particle diffusion kinetics model [10][11] with the experimental data are also very low (Fig. 5).…”

Section: Models Of Molecular Diffusion Processmentioning

confidence: 88%

“…The Table 3 presents the results of the modeling of the experimental data by Weber and Morris kinetics model [9], the external diffusion kinetics model [10][11] and Elovich kinetics model [12].…”

Section: Models Of Molecular Diffusion Processmentioning

confidence: 99%

“…As regards the kinetics models based on the molecular diffusion process, they are based on the fact that the adsorption rate is determined by the molecular diffusion process. They correspond to several models including Weber and Morris kinetics model [9] (the intra-particle diffusion kinetics model), the diffusion in the liquid film kinetics model or the external diffusion kinetics model [10][11] and Elovich kinetics model [12]. [13].…”

Section: Introductionmentioning

confidence: 99%

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Contribution to the Study of Phosphorus Adsorption Kinetics on the Superficial Sediments of a Recently Development Artificial Estuary: Vridi Channel (Côte d'Ivoire)

Samuel

Konan

Trokourey

2021

CSIJ

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The aim of this study is to characterize phosphates adsorption kinetics on the superficial sediments of Vridi channel from its new hydromorphology. So, three scenarios have been carried out taking account the different waters seasons of this estuary by using pH and temperature as relevant parameters. In the first scenario, the experiments carried out at pH = 8 and T = 20°C to simulate phosphates adsorption on these sediments in its great cold season. In the second, the experiments carried out at pH = 8 and T = 25° C to simulate phosphates adsorption on these substrates in its hot season and small cold season. In the third, the experiments carried out at pH = 7 and T = 30°C to simulate phosphates adsorption on these sediments in its flood season. The experiences were carried out according to US EPA/530/SW-87/006-F protocol. KH2PO4 solutions were used as phosphates synthetic solutions. The experimental data were modeling by Lagergeen kinetics model (pseudo-order 1), Blanchard kinetics model (pseudo-order 2), Elovich kinetics model, Weber and Morris kinetics model and, external diffusion kinetics model. The results have showed phosphates adsorption on these sediments increase in the experiments carried out at pH = 8 and T = 20°C to those carried out at pH = 7 and T = 30°C. All experimental data have been well modeling by Blanchard kinetics model. So, these phosphates adsorption kinetics are pseudo-order 2 and the chemisorption is the dominant mechanism. The results obtained by the experimental data modeling by Weber and Morris kinetics model and external diffusion kinetics model showed that this process is not limiting by the molecular diffusion process. The experimental data have been again well modeling by Elovich kinetics model. That has confirmed the chemisorption character of this adsorption, and showed this chemisorption is activated.

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“…The growth of such materials even using low residual gas methods as MOCVD or MBE can lead to excess oxygen incorporation in the Fe [246] or Mn [247] containing layers. The residual oxygen may produce the subsurface Mn depletion in the (Ga, Mn)N exposed to the ambient [248]. Most likely the segregation proceeds through surface reaction of both elements causing the outdiffusion of Mn from the subsurface layer of the material.…”

Section: Oxygen Properties In Ganmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Diffusion of Mn in gallium nitride: Experiment and modelling

Cited by 16 publications

References 60 publications

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeyN Nanocrystals Embedded in GaN

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of FeyN Nanocrystals Embedded in GaN

Contribution to the Study of Phosphorus Adsorption Kinetics on the Superficial Sediments of a Recently Development Artificial Estuary: Vridi Channel (Côte d'Ivoire)

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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