Plasma-and thermal-assisted chemical vapor deposited (CVD) tetraethylorthosilicate (TEOS) oxide films were deposited on silicon substrates using a single-wafer reactor. The deposition kinetics of both plasma and thermal CVD processes were studied as a function of temperature. Film properties and bonding structure were analyzed for as-deposited and annealed films using Fourier transform infrared spectroscopy (FTIR), Auger, x-ray photoelectron spectroscopy (XPS), and nuclear reaction analysis (NRA) techniques. The thermal TEOS films were found to be more porous and to contain more hydrogen, but were more conformal than plasma-deposited TEOS films. Without a plasma, thermal temperatures can assist gas-phase reactions between ozone and TEOS (oxidation) to form conformal oxide films at as low as 200~ With a plasma, both gas-phase and subsequent surface CVD reactions between TEOS, ozone, and oxygen are substantially enhanced, thus result in CVD films with higher quality.Low temperature plasma and thermal CVD silicon dioxide films have many applications in high density, advanced semiconductor device fabrication. For good stepcoverage, high mobility organosilicon reactants such as TEOS are normally used (1, 2). In this paper, the plasma and thermally assisted CVD reactions between TEOS, ozone, and oxygen were studied and analyzed as a function of process parameters. The effect of processing temperature on the deposition kinetics and the correlation to film quality was examined in detail. Variations of both plasma and thermally deposited films were analyzed before and after densification annealing by FrIR, Auger, XPS, and NRA. In addition, other film properties such as wet and dry etch characteristics, stress and step-coverage were also investigated.
ExperimentalPlasma and thermal CVD TEOS oxide films were deposited on silicon substrates using a single-wafer deposition system as shown in Fig. 1. Oxygen, TEOS, and helium (as a carrier gas bubbled through the TEOS) were used as deposition gases for plasma-assisted (13.56 MHz) CVD processing. TEOS, ozone, and oxygen were used for thermal CVD processing. The temperature of the TEOS ampul and the helium/TEOS gas line was maintained at 35~ during the deposition process. Careful temperature control of the helium/TEOS is required to reduce possible TEOS droplet formation in gas line. The TEOS droplets will result in incomplete TEOS decomposition and carbon contamination in the film.Typical deposition conditions for both plasma and thermal films appear in Table I. Thermal CVD reactions between TEOS and ozone were studied as a function of substrate temperature from 200 ~ to 440~ Plasma CVD reactions between TEOS and oxygen were studied for substrate temperatures from 50 ~ to 440~ All films were deposited on bare silicon p-type substrates. Film thickness and refractive index were measured using a He-Ne laser ellipsometer. FTIR analysis was performed with 500 nm films deposited on bare silicon substrates. Background absorption of the substrate was subtracted to obtain the bulk film s...
Abstract-In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.
We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected shortchannel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.
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