SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for stability by choosing the cell layout, device threshold voltages, and the ß ratio. 8T-SRAM, however, provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling. We demonstrate the smallest 6T (0.124µm 2 half-cell) and full 8T (0.1998µm 2 ) cells to date.

Data obtained by the associated production of A hypernuclei through the (n + ,K + ) reaction are presented for a wide range of mass numbers. The special features which make this reaction useful are pointed out. The reaction is shown to be an excellent probe of A single-particle states, as demonstrated by the excitation of deeply bound states which are interpreted as the weak coupling of a A to neutronhole states of the core. The A binding energies and ground-state production cross sections for JvBe, 'AC, '&>, 2 2Si, ^Ca, 5 A V, and ^Y are presented.