1995
DOI: 10.1016/0040-6090(95)06896-1
|View full text |Cite
|
Sign up to set email alerts
|

CVD of fluorosilicate glass for ULSI applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
35
0

Year Published

1997
1997
2018
2018

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 67 publications
(36 citation statements)
references
References 7 publications
1
35
0
Order By: Relevance
“…The above conclusions are in good agreement with the numerous studies of SiOF films moisture stability versus F content. As it was reported elsewhere 1,8,14,26 the amount of silanols in SiOF films initially reduces with increasing the F content, but then starts to increase again demonstrating the existence of minimum at certain F content. which results in their structural relaxation towards the equilibrium ͗͘ during post-deposition period, as seen in Fig.…”
Section: A Microstructure and Energetics Of As-deposited Siof Filmssupporting
confidence: 57%
See 1 more Smart Citation
“…The above conclusions are in good agreement with the numerous studies of SiOF films moisture stability versus F content. As it was reported elsewhere 1,8,14,26 the amount of silanols in SiOF films initially reduces with increasing the F content, but then starts to increase again demonstrating the existence of minimum at certain F content. which results in their structural relaxation towards the equilibrium ͗͘ during post-deposition period, as seen in Fig.…”
Section: A Microstructure and Energetics Of As-deposited Siof Filmssupporting
confidence: 57%
“…% Drastic increase of the silanol concentration when F content in the films reaches a critical concentration was reported in many studies. 1,3,26,29 Low-fluorinated SiOF films are characterized by relatively dense H-and OH-free network ͑see Fig. 1͒ built from low-order ring structural units.…”
Section: Water-induced Relaxation In High-fluorinated Siof Filmsmentioning
confidence: 99%
“…Since fluorine is one of only two additives (the other being boron) that lowers the refractive index of silica, it is commonly used in controlling index profiles in optical fiber [1,2]. Fluorine also lowers the dielectric constant of silica, making Fdoped silica the preferred dielectric in microprocessors and logic devices [3]. This versatile material is also being considered as a photomask substrate for deep ultraviolet (157 nm) photolithography applications [4,5] and has been investigated for use in catalysis [6].…”
Section: Introductionmentioning
confidence: 99%
“…This has resulted in widespread application of fluorine doping of silica to control the refractive index profile of optical fibers [2][3][4][5]. Fluorine also lowers the static dielectric constant of silica, from e s = 4.2 to values as low as 3.2 [6][7][8]. Therefore, F-doped silica is an extremely important material with low dielectric constant, used in microprocessors and logic devices [9].…”
Section: Introductionmentioning
confidence: 99%